Deep-potential enabled multiscale simulation of gallium nitride devices on boron arsenide cooling substrates

Location
Deutsche Nationalbibliothek Frankfurt am Main
Extent
1 Online-Ressource.
Language
Englisch

Bibliographic citation
Deep-potential enabled multiscale simulation of gallium nitride devices on boron arsenide cooling substrates ; volume:15 ; number:1 ; day:25 ; month:3 ; year:2024 ; pages:1-9 ; date:12.2024
Nature Communications ; 15, Heft 1 (25.3.2024), 1-9, 12.2024

Creator
Wu, Jing
Zhou, E.
Huang, An
Zhang, Hongbin
Hu, Ming
Qin, Guangzhao
Contributor
SpringerLink (Online service)

DOI
10.1038/s41467-024-46806-7
URN
urn:nbn:de:101:1-2406292136105.172457938984
Rights
Open Access; Der Zugriff auf das Objekt ist unbeschränkt möglich.
Last update
14.08.2025, 10:50 AM CEST

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