Upconverted electroluminescence via Auger scattering of interlayer excitons in van der Waals heterostructures
- Location
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Deutsche Nationalbibliothek Frankfurt am Main
- ISSN
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2041-1723
- Extent
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Online-Ressource
- Language
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Englisch
- Notes
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online resource.
- Bibliographic citation
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Upconverted electroluminescence via Auger scattering of interlayer excitons in van der Waals heterostructures ; volume:10 ; number:1 ; day:27 ; month:5 ; year:2019 ; pages:1-7 ; date:12.2019
Nature Communications ; 10, Heft 1 (27.5.2019), 1-7, 12.2019
- Creator
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Binder, J.
Howarth, J.
Withers, F.
Molas, M. R.
Taniguchi, T.
Watanabe, Kenji
Faugeras, C.
Wysmolek, A.
Danovich, M.
Fal'ko, Vladimir
Geim, A. K.
Novoselov, K. S.
Potemski, M.
Kozikov, A.
- Contributor
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SpringerLink (Online service)
- DOI
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10.1038/s41467-019-10323-9
- URN
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urn:nbn:de:101:1-2019102015031028131639
- Rights
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Open Access; Der Zugriff auf das Objekt ist unbeschränkt möglich.
- Last update
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15.08.2025, 7:19 AM CEST
Data provider
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Associated
- Binder, J.
- Howarth, J.
- Withers, F.
- Molas, M. R.
- Taniguchi, T.
- Watanabe, Kenji
- Faugeras, C.
- Wysmolek, A.
- Danovich, M.
- Fal'ko, Vladimir
- Geim, A. K.
- Novoselov, K. S.
- Potemski, M.
- Kozikov, A.
- SpringerLink (Online service)
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Localized interlayer excitons in MoSe2–WSe2 heterostructures without a moiré potential
Electroluminescence from multi-particle exciton complexes in transition metal dichalcogenide semiconductors
Electroluminescence from pure resonant states in hBN-based vertical tunneling junctions
Coherent momentum control of forbidden excitons
Twist angle dependent interlayer transfer of valley polarization from excitons to free charge carriers in WSe2/MoSe2 heterobilayers
Twist angle dependent interlayer transfer of valley polarization from excitons to free charge carriers in WSe2/MoSe2 heterobilayers
Interlayer Excitons in Transition‐Metal Dichalcogenide Heterobilayers
Monolayer indium selenide: an indirect bandgap material exhibits efficient brightening of dark excitons
Tunable interlayer excitons and switchable interlayer trions via dynamic near-field cavity
Excitons and polarons in resonant Auger decay processes
Excitons and Polarons in resonant Auger decay processes
High‐Speed Electroluminescence Modulation in Monolayer WS 2
Localized interlayer excitons in MoSe2–WSe2 heterostructures without a moiré potential
Electroluminescence from multi-particle exciton complexes in transition metal dichalcogenide semiconductors
Electroluminescence from pure resonant states in hBN-based vertical tunneling junctions
Coherent momentum control of forbidden excitons
Twist angle dependent interlayer transfer of valley polarization from excitons to free charge carriers in WSe2/MoSe2 heterobilayers
Twist angle dependent interlayer transfer of valley polarization from excitons to free charge carriers in WSe2/MoSe2 heterobilayers
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Monolayer indium selenide: an indirect bandgap material exhibits efficient brightening of dark excitons
Tunable interlayer excitons and switchable interlayer trions via dynamic near-field cavity
Excitons and polarons in resonant Auger decay processes