3D finite element modeling and simulation of industrial semiconductor devices including impact ionization

Location
Deutsche Nationalbibliothek Frankfurt am Main
ISSN
2190-5983
Extent
Online-Ressource
Language
Englisch
Notes
online resource.

Bibliographic citation
3D finite element modeling and simulation of industrial semiconductor devices including impact ionization ; volume:5 ; number:1 ; day:14 ; month:3 ; year:2015 ; pages:1-18 ; date:12.2015
Journal of mathematics in industry ; 5, Heft 1 (14.3.2015), 1-18, 12.2015

Creator
Mauri, Aurelio
Bortolossi, Andrea
Novielli, Giovanni
Sacco, Riccardo
Contributor
SpringerLink (Online service)

DOI
10.1186/s13362-015-0015-z
URN
urn:nbn:de:101:1-2019070200380755087563
Rights
Open Access; Der Zugriff auf das Objekt ist unbeschränkt möglich.
Last update
14.08.2025, 10:48 AM CEST

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Associated

  • Mauri, Aurelio
  • Bortolossi, Andrea
  • Novielli, Giovanni
  • Sacco, Riccardo
  • SpringerLink (Online service)

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