3D finite element modeling and simulation of industrial semiconductor devices including impact ionization
- Location
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Deutsche Nationalbibliothek Frankfurt am Main
- ISSN
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2190-5983
- Extent
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Online-Ressource
- Language
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Englisch
- Notes
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online resource.
- Bibliographic citation
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3D finite element modeling and simulation of industrial semiconductor devices including impact ionization ; volume:5 ; number:1 ; day:14 ; month:3 ; year:2015 ; pages:1-18 ; date:12.2015
Journal of mathematics in industry ; 5, Heft 1 (14.3.2015), 1-18, 12.2015
- Creator
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Mauri, Aurelio
Bortolossi, Andrea
Novielli, Giovanni
Sacco, Riccardo
- Contributor
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SpringerLink (Online service)
- DOI
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10.1186/s13362-015-0015-z
- URN
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urn:nbn:de:101:1-2019070200380755087563
- Rights
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Open Access; Der Zugriff auf das Objekt ist unbeschränkt möglich.
- Last update
- 14.08.2025, 10:48 AM CEST
Data provider
Deutsche Nationalbibliothek. If you have any questions about the object, please contact the data provider.
Associated
- Mauri, Aurelio
- Bortolossi, Andrea
- Novielli, Giovanni
- Sacco, Riccardo
- SpringerLink (Online service)