Full charge incorporation in ab initio simulations of two-dimensional semiconductor-based devices
- Standort
-
Deutsche Nationalbibliothek Frankfurt am Main
- Umfang
-
Online-Ressource, 1 online resource.
- Sprache
-
Englisch
- Erschienen in
-
Full charge incorporation in ab initio simulations of two-dimensional semiconductor-based devices ; day:8 ; month:6 ; year:2023 ; pages:1-13
Journal of computational electronics ; (8.6.2023), 1-13
- Klassifikation
-
Physik
- Urheber
-
Duflou, Rutger
Houssa, Michel
Afzalian, Aryan
- Beteiligte Personen und Organisationen
-
SpringerLink (Online service)
- DOI
-
10.1007/s10825-023-02055-3
- URN
-
urn:nbn:de:101:1-2023091615341746879306
- Rechteinformation
-
Open Access; Der Zugriff auf das Objekt ist unbeschränkt möglich.
- Letzte Aktualisierung
- 14.08.2025, 10:45 MESZ
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Beteiligte
- Duflou, Rutger
- Houssa, Michel
- Afzalian, Aryan
- SpringerLink (Online service)
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