Photo‐synaptic Memristor Devices from Solution‐processed Ga 2 O 3 Thin Films
- Standort
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Deutsche Nationalbibliothek Frankfurt am Main
- Umfang
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Online-Ressource
- Sprache
-
Englisch
- Erschienen in
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Photo‐synaptic Memristor Devices from Solution‐processed Ga 2 O 3 Thin Films ; day:22 ; month:10 ; year:2024 ; extent:8
Advanced electronic materials ; (22.10.2024) (gesamt 8)
- Urheber
-
Wang, Wei
Gao, Xiangxiang
Lin, Zhenhua
Bai, Haoyu
Cui, Dongsheng
Su, Jie
Zhang, Jincheng
Hao, Yue
Chang, Jingjing
- DOI
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10.1002/aelm.202400512
- URN
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urn:nbn:de:101:1-2410231412320.765242213101
- Rechteinformation
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Open Access; Der Zugriff auf das Objekt ist unbeschränkt möglich.
- Letzte Aktualisierung
- 15.08.2025, 07:32 MESZ
Datenpartner
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Beteiligte
- Wang, Wei
- Gao, Xiangxiang
- Lin, Zhenhua
- Bai, Haoyu
- Cui, Dongsheng
- Su, Jie
- Zhang, Jincheng
- Hao, Yue
- Chang, Jingjing
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