- Standort
-
Deutsche Nationalbibliothek Frankfurt am Main
- Umfang
-
Online-Ressource
- Sprache
-
Englisch
- Erschienen in
-
High‐Frequency Operation of Vertical Organic Field‐Effect Transistors ; day:26 ; month:06 ; year:2022 ; extent:7
Advanced science ; (26.06.2022) (gesamt 7)
- Urheber
-
Höppner, Marco
Kheradmand‐Boroujeni, Bahman
Vahland, Jörn
Sawatzki, Michael Franz
Kneppe, David
Ellinger, Frank
Kleemann, Hans
- DOI
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10.1002/advs.202201660
- URN
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urn:nbn:de:101:1-2022062715152025903784
- Rechteinformation
-
Open Access; Der Zugriff auf das Objekt ist unbeschränkt möglich.
- Letzte Aktualisierung
- 15.08.2025, 07:26 MESZ
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Beteiligte
- Höppner, Marco
- Kheradmand‐Boroujeni, Bahman
- Vahland, Jörn
- Sawatzki, Michael Franz
- Kneppe, David
- Ellinger, Frank
- Kleemann, Hans
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Exploiting Ambipolarity in Graphene Field‐Effect Transistors for Novel Designs on High‐Frequency Analog Electronics
Contact Doping for Vertical Organic Field‐Effect Transistors
Downscaling of Organic Field‐Effect Transistors based on High‐Mobility Semiconducting Blends for High‐Frequency Operation
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