Detailed photoluminescence studies of thin film Cu₂S for determination of quasi-Fermi level splitting and defect levels

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Location: Deutsche Nationalbibliothek Frankfurt am Main

Extent: Online-Ressource

Language: Englisch

Bibliographic citation: In: Journal of Applied Physics, 114, (23), AIP Publishing, ISSN 0021-8979, https://doi.org/10.26083/tuprints-00019912

Event: Veröffentlichung

(where): Darmstadt

(who): Universitäts- und Landesbibliothek

(when): 2021

Creator: Sträter, Hendrik
Brüggemann, R.
Siol, S.
Klein, Andreas
Jaegermann, Wolfram
Bauer, Gottfried H.

DOI: 10.26083/tuprints-00019912

URN: urn:nbn:de:tuda-tuprints-199128

Rights: Der Zugriff auf das Objekt ist unbeschränkt möglich.

Last update: 15.08.2025, 7:20 AM CEST

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2021

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Limitation of Fermi level shifts by polaron defect states in hematite photoelectrodes

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Pinning of the Fermi Level in CuFeO 2 by Polaron Formation Limiting the Photovoltage for Photochemical Water Splitting

Pinning of the Fermi Level in CuFeO₂ by Polaron Formation Limiting the Photovoltage for Photochemical Water Splitting

Polarization dependence of ZnO Schottky barriers revealed by photoelectron spectroscopy

Photoemission studies on undoped SnO₂ buffer layers for CdTe thin film solar cells

Partial density of states in the CuInSe₂ valence bands

Laterally inhomogeneous surface-potential distribution and photovoltage at clustered In/WSe₂(0001) interfaces

ZnS deposition onto bare and GaSe terminated Silicon-(111)-surfaces

Fermi-level-dependent defect formation in Cu-chalcopyrite semiconductors

Limitation of Fermi level shifts by polaron defect states in hematite photoelectrodes

Author Correction: Limitation of Fermi level shifts by polaron defect states in hematite photoelectrodes

Review - Electronic Properties of 2D Layered Chalcogenide Surfaces and Interfaces grown by (quasi) van der Waals Epitaxy

Electronic Structure of Functionalized Semiconductor Surfaces and Interfaces for Photoelectrochemical Water Splitting

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Pinning of the Fermi Level in CuFeO₂ by Polaron Formation Limiting the Photovoltage for Photochemical Water Splitting

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Photoemission studies on undoped SnO₂ buffer layers for CdTe thin film solar cells

Partial density of states in the CuInSe₂ valence bands

Laterally inhomogeneous surface-potential distribution and photovoltage at clustered In/WSe₂(0001) interfaces

ZnS deposition onto bare and GaSe terminated Silicon-(111)-surfaces

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Detailed photoluminescence studies of thin film Cu₂S for determination of quasi-Fermi level splitting and defect levels

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Other Objects (12)

Fermi-level-dependent defect formation in Cu-chalcopyrite semiconductors

Limitation of Fermi level shifts by polaron defect states in hematite photoelectrodes

Author Correction: Limitation of Fermi level shifts by polaron defect states in hematite photoelectrodes

Review - Electronic Properties of 2D Layered Chalcogenide Surfaces and Interfaces grown by (quasi) van der Waals Epitaxy

Electronic Structure of Functionalized Semiconductor Surfaces and Interfaces for Photoelectrochemical Water Splitting

Pinning of the Fermi Level in CuFeO 2 by Polaron Formation Limiting the Photovoltage for Photochemical Water Splitting

Pinning of the Fermi Level in CuFeO₂ by Polaron Formation Limiting the Photovoltage for Photochemical Water Splitting

Polarization dependence of ZnO Schottky barriers revealed by photoelectron spectroscopy

Photoemission studies on undoped SnO₂ buffer layers for CdTe thin film solar cells

Partial density of states in the CuInSe₂ valence bands

Laterally inhomogeneous surface-potential distribution and photovoltage at clustered In/WSe₂(0001) interfaces

ZnS deposition onto bare and GaSe terminated Silicon-(111)-surfaces

Fermi-level-dependent defect formation in Cu-chalcopyrite semiconductors

Limitation of Fermi level shifts by polaron defect states in hematite photoelectrodes

Author Correction: Limitation of Fermi level shifts by polaron defect states in hematite photoelectrodes

Review - Electronic Properties of 2D Layered Chalcogenide Surfaces and Interfaces grown by (quasi) van der Waals Epitaxy

Electronic Structure of Functionalized Semiconductor Surfaces and Interfaces for Photoelectrochemical Water Splitting

Pinning of the Fermi Level in CuFeO 2 by Polaron Formation Limiting the Photovoltage for Photochemical Water Splitting

Pinning of the Fermi Level in CuFeO₂ by Polaron Formation Limiting the Photovoltage for Photochemical Water Splitting

Polarization dependence of ZnO Schottky barriers revealed by photoelectron spectroscopy

Photoemission studies on undoped SnO₂ buffer layers for CdTe thin film solar cells

Partial density of states in the CuInSe₂ valence bands

Laterally inhomogeneous surface-potential distribution and photovoltage at clustered In/WSe₂(0001) interfaces

ZnS deposition onto bare and GaSe terminated Silicon-(111)-surfaces

Fermi-level-dependent defect formation in Cu-chalcopyrite semiconductors

Limitation of Fermi level shifts by polaron defect states in hematite photoelectrodes

Author Correction: Limitation of Fermi level shifts by polaron defect states in hematite photoelectrodes

Review - Electronic Properties of 2D Layered Chalcogenide Surfaces and Interfaces grown by (quasi) van der Waals Epitaxy

Electronic Structure of Functionalized Semiconductor Surfaces and Interfaces for Photoelectrochemical Water Splitting

Pinning of the Fermi Level in CuFeO 2 by Polaron Formation Limiting the Photovoltage for Photochemical Water Splitting

Pinning of the Fermi Level in CuFeO₂ by Polaron Formation Limiting the Photovoltage for Photochemical Water Splitting

Polarization dependence of ZnO Schottky barriers revealed by photoelectron spectroscopy

Photoemission studies on undoped SnO₂ buffer layers for CdTe thin film solar cells

Partial density of states in the CuInSe₂ valence bands

Laterally inhomogeneous surface-potential distribution and photovoltage at clustered In/WSe₂(0001) interfaces

ZnS deposition onto bare and GaSe terminated Silicon-(111)-surfaces

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