Epitaxial Lateral Overgrowth of GaAsP for III‐V/Si‐Based Photovoltaics

GaAsP/Si with high crystalline quality fabricated by cost‐effective heteroepitaxial technology is a promising pathway for realizing low‐cost Si‐based tandem solar cell with efficiency higher than 30%. Herein, hydride vapor‐phase epitaxy is used to perform selective area growth of GaAsP with high lateral coverage, referred to as epitaxial lateral overgrowth (ELOG). The ELOG is performed on GaAs‐based substrates as a prestudy, followed by GaAs/Si and GaAsP/Si seed wafers employing chemical mechanical polishing to fabricate full 2″ GaAsP/Si templates. These are subsequently used to grow and process GaAsP/Si pn‐junction structures for electrical characterization. The ELOG GaAsP is studied by spatially resolved photoluminescence (PL) mapping and high‐resolution X‐ray diffraction measurements. PL analysis of the GaAsP/GaAs ELOG samples reveals an enhanced P‐incorporation during lateral growth of GaAsP. This is also observed for the GaAsP/Si ELOG templates along with evidence of improved material quality, clearly distinguishing the laterally grown GaAsP from the planar growth directly above the Si substrate. Leakage pathways causing reduced electrical performance of the ELOG GaAsP/Si pn‐junction structures are identified.

Location
Deutsche Nationalbibliothek Frankfurt am Main
Extent
Online-Ressource
Language
Englisch

Bibliographic citation
Epitaxial Lateral Overgrowth of GaAsP for III‐V/Si‐Based Photovoltaics ; day:19 ; month:02 ; year:2023 ; extent:13
Physica status solidi / A. A, Applications and materials science ; (19.02.2023) (gesamt 13)

Creator
Strömberg, Axel
Manavaimaran, Balaji
Srinivasan, Lakshman
Lourdudoss, Sebastian
Sun, Yan-Ting

DOI
10.1002/pssa.202200623
URN
urn:nbn:de:101:1-2023022014034706050172
Rights
Open Access; Der Zugriff auf das Objekt ist unbeschränkt möglich.
Last update
14.08.2025, 10:50 AM CEST

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Associated

  • Strömberg, Axel
  • Manavaimaran, Balaji
  • Srinivasan, Lakshman
  • Lourdudoss, Sebastian
  • Sun, Yan-Ting

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