Illumination Effect on Bipolar Switching Properties of Gd:SiO2 RRAM Devices Using Transparent Indium Tin Oxide Electrode
- Standort
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Deutsche Nationalbibliothek Frankfurt am Main
- ISSN
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1556-276X
- Umfang
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Online-Ressource
- Sprache
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Englisch
- Anmerkungen
-
online resource.
- Erschienen in
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Illumination Effect on Bipolar Switching Properties of Gd:SiO2 RRAM Devices Using Transparent Indium Tin Oxide Electrode ; volume:11 ; number:1 ; day:27 ; month:4 ; year:2016 ; pages:1-5 ; date:12.2016
Nanoscale research letters ; 11, Heft 1 (27.4.2016), 1-5, 12.2016
- Urheber
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Chen, Kai-Huang
- Beteiligte Personen und Organisationen
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Chang, Kuan-Chang
Chang, Ting-Chang
Tsai, Tsung-Ming
Liang, Shu-Ping
Young, Tai-Fa
Syu, Yong-En
Sze, Simon M.
SpringerLink (Online service)
- DOI
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10.1186/s11671-016-1431-8
- URN
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urn:nbn:de:1111-201604286609
- Rechteinformation
-
Der Zugriff auf das Objekt ist unbeschränkt möglich.
- Letzte Aktualisierung
- 14.08.2025, 10:56 MESZ
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Beteiligte
- Chen, Kai-Huang
- Chang, Kuan-Chang
- Chang, Ting-Chang
- Tsai, Tsung-Ming
- Liang, Shu-Ping
- Young, Tai-Fa
- Syu, Yong-En
- Sze, Simon M.
- SpringerLink (Online service)
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