Illumination Effect on Bipolar Switching Properties of Gd:SiO2 RRAM Devices Using Transparent Indium Tin Oxide Electrode

Location
Deutsche Nationalbibliothek Frankfurt am Main
ISSN
1556-276X
Extent
Online-Ressource
Language
Englisch
Notes
online resource.

Bibliographic citation
Illumination Effect on Bipolar Switching Properties of Gd:SiO2 RRAM Devices Using Transparent Indium Tin Oxide Electrode ; volume:11 ; number:1 ; day:27 ; month:4 ; year:2016 ; pages:1-5 ; date:12.2016
Nanoscale research letters ; 11, Heft 1 (27.4.2016), 1-5, 12.2016

Creator
Chen, Kai-Huang
Contributor
Chang, Kuan-Chang
Chang, Ting-Chang
Tsai, Tsung-Ming
Liang, Shu-Ping
Young, Tai-Fa
Syu, Yong-En
Sze, Simon M.
SpringerLink (Online service)

DOI
10.1186/s11671-016-1431-8
URN
urn:nbn:de:1111-201604286609
Rights
Der Zugriff auf das Objekt ist unbeschränkt möglich.
Last update
14.08.2025, 10:56 AM CEST

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Associated

  • Chen, Kai-Huang
  • Chang, Kuan-Chang
  • Chang, Ting-Chang
  • Tsai, Tsung-Ming
  • Liang, Shu-Ping
  • Young, Tai-Fa
  • Syu, Yong-En
  • Sze, Simon M.
  • SpringerLink (Online service)

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