Room-temperature electrically pumped near-infrared random lasing from high-quality m-plane ZnO-based metal-insulator-semiconductor devices
- Standort
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Deutsche Nationalbibliothek Frankfurt am Main
- ISSN
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1556-276X
- Umfang
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Online-Ressource
- Sprache
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Englisch
- Anmerkungen
-
online resource.
- Erschienen in
-
Room-temperature electrically pumped near-infrared random lasing from high-quality m-plane ZnO-based metal-insulator-semiconductor devices ; volume:10 ; number:1 ; day:1 ; month:3 ; year:2015 ; pages:1-6 ; date:12.2015
Nanoscale research letters ; 10, Heft 1 (1.3.2015), 1-6, 12.2015
- Urheber
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Chen, Chao
Wang, Ti
Wu, Hao
Zheng, He
Wang, Jianbo
Xu, Yang
Liu, Chang
- Beteiligte Personen und Organisationen
-
SpringerLink (Online service)
- DOI
-
10.1186/s11671-015-0816-4
- URN
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urn:nbn:de:101:1-2021081507343105439825
- Rechteinformation
-
Open Access; Der Zugriff auf das Objekt ist unbeschränkt möglich.
- Letzte Aktualisierung
- 14.08.2025, 10:44 MESZ
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Beteiligte
- Chen, Chao
- Wang, Ti
- Wu, Hao
- Zheng, He
- Wang, Jianbo
- Xu, Yang
- Liu, Chang
- SpringerLink (Online service)
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