Study on Boron‐Hydrogen Pairs in Bare and Passivated Float‐Zone Silicon Wafers
- Standort
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Deutsche Nationalbibliothek Frankfurt am Main
- Umfang
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Online-Ressource
- Sprache
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Englisch
- Erschienen in
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In: Physica Status Solidi (A) - Applications and Materials Science ; 218 (2021), 23. - 2100220. - Wiley. - ISSN 1862-6300. - eISSN 1862-6319
- Ereignis
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Veröffentlichung
- (wo)
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Konstanz
- (wer)
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KOPS Universität Konstanz
- (wann)
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2021
- Urheber
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Winter, Clemens
Simon, Jochen
Herguth, Axel
- URN
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urn:nbn:de:bsz:352-2-j8v3zccsolhs6
- Rechteinformation
-
Der Zugriff auf das Objekt ist unbeschränkt möglich.
- Letzte Aktualisierung
-
15.08.2025, 07:35 MESZ
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Beteiligte
- Winter, Clemens
- Simon, Jochen
- Herguth, Axel
- KOPS Universität Konstanz
Entstanden
- 2021
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Investigating possible causes of light induced degradation in boron-doped Float-Zone silicon
A 3-state defect model for light-induced degradation in boron-doped float-zone silicon
Non-cryogenic infrared absorption spectroscopy for direct boron-hydrogen pair quantification
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Towards a high throughput solution for boron-oxygen related regeneration
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