Molecular-Beam Epitaxy of Metamorphic InAs/InGaAs Quantum-Dot Heterostructures Emitting in the Telecom Wavelength Range
- Location
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Deutsche Nationalbibliothek Frankfurt am Main
- Extent
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1 Online-Ressource.
- Language
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Englisch
- Bibliographic citation
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Molecular-Beam Epitaxy of Metamorphic InAs/InGaAs Quantum-Dot Heterostructures Emitting in the Telecom Wavelength Range ; volume:120 ; number:9 ; day:13 ; month:12 ; year:2024 ; pages:668-674 ; date:11.2024
JETP letters ; 120, Heft 9 (13.12.2024), 668-674, 11.2024
- Creator
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Sorokin, S. V.
Klimko, G. V.
Sedova, I. V.
Galimov, A. I.
Serov, Yu. M.
Kirilenko, D. A.
Prasolov, N. D.
Toropov, A. A.
- Contributor
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SpringerLink (Online service)
- DOI
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10.1134/S0021364024603294
- URN
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urn:nbn:de:101:1-2502252127109.671418100257
- Rights
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Open Access; Der Zugriff auf das Objekt ist unbeschränkt möglich.
- Last update
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15.08.2025, 7:40 AM CEST
Data provider
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Associated
- Sorokin, S. V.
- Klimko, G. V.
- Sedova, I. V.
- Galimov, A. I.
- Serov, Yu. M.
- Kirilenko, D. A.
- Prasolov, N. D.
- Toropov, A. A.
- SpringerLink (Online service)
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Thin-film InGaAs metamorphic buffer for telecom C-band quantum dots and optical resonators
Thin-film InGaAs metamorphic buffer for telecom C-band InAs quantum dots and optical resonators on GaAs platform
Self-organization of quantum-dot pairs by high-temperature droplet epitaxy
Self‐Assembled InAs Quantum Dots on InGaAsP/InP (100) by Modified Droplet Epitaxy in Metal–Organic Vapor Phase Epitaxy around the Telecom C‐Band for Quantum Photonic Applications
Lattice‐Mismatched Epitaxy of InAs on (111) A‐Oriented Substrate: Metamorphic Layer Growth and Self‐Assembly of Quantum Dots
Droplet epitaxy symmetric InAs/InP quantum dots for quantum emission in the third telecom window: morphology, optical and electronic properties
Two-photon interference at telecom wavelengths for time-bin-encoded single photons from quantum-dot spin qubits
Efficiency of four-wave mixing in injection-locked InAs/GaAs quantum-dot lasers
InAs/GaAs excited state quantum-dot transmitters operating under long-delayed optical feedback
Molecular beam epitaxy of quantum dots on misoriented GaAs(111)B by droplet epitaxy
Guided self-assembly of lateral InAs/GaAs quantum-dot molecules for single molecule spectroscopy
Which telecom services should be sustained as national minimum services?
Thin-film InGaAs metamorphic buffer for telecom C-band quantum dots and optical resonators
Thin-film InGaAs metamorphic buffer for telecom C-band InAs quantum dots and optical resonators on GaAs platform
Self-organization of quantum-dot pairs by high-temperature droplet epitaxy
Self‐Assembled InAs Quantum Dots on InGaAsP/InP (100) by Modified Droplet Epitaxy in Metal–Organic Vapor Phase Epitaxy around the Telecom C‐Band for Quantum Photonic Applications
Lattice‐Mismatched Epitaxy of InAs on (111) A‐Oriented Substrate: Metamorphic Layer Growth and Self‐Assembly of Quantum Dots
Droplet epitaxy symmetric InAs/InP quantum dots for quantum emission in the third telecom window: morphology, optical and electronic properties
Two-photon interference at telecom wavelengths for time-bin-encoded single photons from quantum-dot spin qubits
Efficiency of four-wave mixing in injection-locked InAs/GaAs quantum-dot lasers
InAs/GaAs excited state quantum-dot transmitters operating under long-delayed optical feedback
Molecular beam epitaxy of quantum dots on misoriented GaAs(111)B by droplet epitaxy
Guided self-assembly of lateral InAs/GaAs quantum-dot molecules for single molecule spectroscopy