Engineering shallow and deep level defects in κ-Ga2O3 thin films: comparing metal-organic vapour phase epitaxy to molecular beam epitaxy and the effect of annealing treatments

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Location: Deutsche Nationalbibliothek Frankfurt am Main

Extent: Online-Ressource

Language: Englisch

Bibliographic citation: In: 10.1016/j.mtphys.2024.101463

Event: Veröffentlichung

(where): Aachen

(who): Universitätsbibliothek der RWTH Aachen

(when): 2024

Creator: Mazzolini, P.
Varley, J. B.
Parisini, A.
Sacchi, A.
Pavesi, M.
Bosio, A.
Bosi, M.
Seravalli, L.
Janzen, B. M.
Marggraf, M. N.
Bernhardt, N.
Wagner, M. R.
Ardenghi, A.
Bierwagen, O.
Falkenstein, Andreas
Kler, Joe
De Souza, Roger A.
Martin, Manfred
Mezzadri, F.
Borelli, C.
Fornari, R.

DOI: 10.18154/RWTH-2025-00081

URN: urn:nbn:de:101:1-2502200044155.261425104268

Rights: Der Zugriff auf das Objekt ist unbeschränkt möglich.

Last update: 15.08.2025, 7:23 AM CEST

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Associated

Mazzolini, P.
Varley, J. B.
Parisini, A.
Sacchi, A.
Pavesi, M.
Bosio, A.
Bosi, M.
Seravalli, L.
Janzen, B. M.
Marggraf, M. N.
Bernhardt, N.
Wagner, M. R.
Ardenghi, A.
Bierwagen, O.
Falkenstein, Andreas
Kler, Joe
De Souza, Roger A.
Martin, Manfred
Mezzadri, F.
Borelli, C.
Fornari, R.
Universitätsbibliothek der RWTH Aachen

Time of origin

2024

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Engineering shallow and deep level defects in κ-Ga2O3 thin films: comparing metal-organic vapour phase epitaxy to molecular beam epitaxy and the effect of annealing treatments

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Applications of remote epitaxy and van der Waals epitaxy

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Engineering shallow and deep level defects in κ-Ga2O3 thin films: comparing metal-organic vapour phase epitaxy to molecular beam epitaxy and the effect of annealing treatments

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Epitaxy of nanostructures

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Engineering shallow and deep level defects in κ-Ga2O3 thin films: comparing metal-organic vapour phase epitaxy to molecular beam epitaxy and the effect of annealing treatments

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Other Objects (12)

Engineering shallow and deep level defects in κ-Ga2O3 thin films: comparing metal-organic vapour phase epitaxy to molecular beam epitaxy and the effect of annealing treatments

Niederlande.- Amsterdam.- International Conference on Vapour Growth and Epitaxy

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Epitaxy of nanostructures

Molecular beam epitaxy

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Engineering shallow and deep level defects in κ-Ga2O3 thin films: comparing metal-organic vapour phase epitaxy to molecular beam epitaxy and the effect of annealing treatments

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Epitaxy of nanostructures

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Advances in epitaxy and endotaxy : Physical problems of epitaxy. [Mit] 9 tab.

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Engineering shallow and deep level defects in κ-Ga2O3 thin films: comparing metal-organic vapour phase epitaxy to molecular beam epitaxy and the effect of annealing treatments

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Molecular beam epitaxy

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Advances in epitaxy and endotaxy : Physical problems of epitaxy. [Mit] 9 tab.

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