A Dual Magnetic Tunnel Junction‐Based Neuromorphic Device

With the advent of artificial intelligence (AI) in computational devices technology, various synaptic array architectures are proposed for neuromorphic computing applications. Among them, the non‐volatile memory (NVM) architectures are very promising for their small cell size, ultra‐low energy consumption, and capability for large parallel data processing through 3D configurations capable of multilevel signal processing. Herein, the viability of such magnetic tunnel junction (MTJ)‐based synaptic devices via fabrication and characterization of multi‐junction spintronic devices is demonstrated, with the experimental results supported through micromagnetic simulations.

Location
Deutsche Nationalbibliothek Frankfurt am Main
Extent
Online-Ressource
Language
Englisch

Bibliographic citation
A Dual Magnetic Tunnel Junction‐Based Neuromorphic Device ; volume:2 ; number:12 ; year:2020 ; extent:8
Advanced intelligent systems ; 2, Heft 12 (2020) (gesamt 8)

Creator
Hong, Jeongmin
Li, Xin
Xu, Nuo
Chen, Hong
Cabrini, Stefano
Khizroev, Sakhrat
Bokor, Jeffrey
You, Long

DOI
10.1002/aisy.202000143
URN
urn:nbn:de:101:1-2022063007564967436340
Rights
Open Access; Der Zugriff auf das Objekt ist unbeschränkt möglich.
Last update
15.08.2025, 7:25 AM CEST

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Associated

  • Hong, Jeongmin
  • Li, Xin
  • Xu, Nuo
  • Chen, Hong
  • Cabrini, Stefano
  • Khizroev, Sakhrat
  • Bokor, Jeffrey
  • You, Long

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