A Dual Magnetic Tunnel Junction‐Based Neuromorphic Device
With the advent of artificial intelligence (AI) in computational devices technology, various synaptic array architectures are proposed for neuromorphic computing applications. Among them, the non‐volatile memory (NVM) architectures are very promising for their small cell size, ultra‐low energy consumption, and capability for large parallel data processing through 3D configurations capable of multilevel signal processing. Herein, the viability of such magnetic tunnel junction (MTJ)‐based synaptic devices via fabrication and characterization of multi‐junction spintronic devices is demonstrated, with the experimental results supported through micromagnetic simulations.
- Location
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Deutsche Nationalbibliothek Frankfurt am Main
- Extent
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Online-Ressource
- Language
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Englisch
- Bibliographic citation
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A Dual Magnetic Tunnel Junction‐Based Neuromorphic Device ; volume:2 ; number:12 ; year:2020 ; extent:8
Advanced intelligent systems ; 2, Heft 12 (2020) (gesamt 8)
- Creator
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Hong, Jeongmin
Li, Xin
Xu, Nuo
Chen, Hong
Cabrini, Stefano
Khizroev, Sakhrat
Bokor, Jeffrey
You, Long
- DOI
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10.1002/aisy.202000143
- URN
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urn:nbn:de:101:1-2022063007564967436340
- Rights
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Open Access; Der Zugriff auf das Objekt ist unbeschränkt möglich.
- Last update
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15.08.2025, 7:25 AM CEST
Data provider
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Associated
- Hong, Jeongmin
- Li, Xin
- Xu, Nuo
- Chen, Hong
- Cabrini, Stefano
- Khizroev, Sakhrat
- Bokor, Jeffrey
- You, Long