Photoluminescence from GaN Implanted with Be and F

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Location: Deutsche Nationalbibliothek Frankfurt am Main

Extent: Online-Ressource

Language: Englisch

Bibliographic citation: Photoluminescence from GaN Implanted with Be and F ; day:25 ; month:05 ; year:2023 ; extent:11
Physica status solidi / B. B, Basic solid state physics ; (25.05.2023) (gesamt 11)

Creator: Reshchikov, Michael Alexander
Andrieiev, Oleksandr
Vorobiov, Mykhailo
Demchenko, Denis O.
McEwen, Benjamin
Shahedipour-Sandvik, Shadi

DOI: 10.1002/pssb.202300131

URN: urn:nbn:de:101:1-2023053115123484933251

Rights: Open Access; Der Zugriff auf das Objekt ist unbeschränkt möglich.

Last update: 14.08.2025, 10:44 AM CEST

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Reshchikov, Michael Alexander
Andrieiev, Oleksandr
Vorobiov, Mykhailo
Demchenko, Denis O.
McEwen, Benjamin
Shahedipour-Sandvik, Shadi

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Optimization of the Epitaxial Growth of Undoped GaN Waveguides in GaN-Based Laser Diodes Evaluated by Photoluminescence

Photoluminescence from Defects in Be‐Doped GaN

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Photoluminescence Line‐Shape Analysis of Highly n‐Type Doped Zincblende GaN

On the phenomenon of large photoluminescence red shift in GaN nanoparticles

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Stable and Reversible Photoluminescence from GaN Nanowires in Solution Tuning by Ionic Concentration

Optimization of the Epitaxial Growth of Undoped GaN Waveguides in GaN-Based Laser Diodes Evaluated by Photoluminescence

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Photoluminescence from GaN Implanted with Be and F

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Other Objects (12)

Photoluminescence from Defects in Be‐Doped GaN

Photoluminescence from Vacancy‐Containing Defects in GaN

Photoluminescence from Be‐Doped GaN Grown by Metal‐Organic Chemical Vapor Deposition

Comparative Analysis of Defects in Mg-Implanted and Mg-Doped GaN Layers on Freestanding GaN Substrates

Photoluminescence related to transition metal and carbon defects in GaN

Linearly polarized photoluminescence of InGaN quantum disks embedded in GaN nanorods

Photoluminescence Line‐Shape Analysis of Highly n‐Type Doped Zincblende GaN

On the phenomenon of large photoluminescence red shift in GaN nanoparticles

Photoluminescence line shape analysis of highly n‐type doped zincblende GaN

In-situ photoluminescence measurements during MOVPE growth of GaN and InGaN MQW structures

Stable and Reversible Photoluminescence from GaN Nanowires in Solution Tuning by Ionic Concentration

Optimization of the Epitaxial Growth of Undoped GaN Waveguides in GaN-Based Laser Diodes Evaluated by Photoluminescence

Photoluminescence from Defects in Be‐Doped GaN

Photoluminescence from Vacancy‐Containing Defects in GaN

Photoluminescence from Be‐Doped GaN Grown by Metal‐Organic Chemical Vapor Deposition

Comparative Analysis of Defects in Mg-Implanted and Mg-Doped GaN Layers on Freestanding GaN Substrates

Photoluminescence related to transition metal and carbon defects in GaN

Linearly polarized photoluminescence of InGaN quantum disks embedded in GaN nanorods

Photoluminescence Line‐Shape Analysis of Highly n‐Type Doped Zincblende GaN

On the phenomenon of large photoluminescence red shift in GaN nanoparticles

Photoluminescence line shape analysis of highly n‐type doped zincblende GaN

In-situ photoluminescence measurements during MOVPE growth of GaN and InGaN MQW structures

Stable and Reversible Photoluminescence from GaN Nanowires in Solution Tuning by Ionic Concentration

Optimization of the Epitaxial Growth of Undoped GaN Waveguides in GaN-Based Laser Diodes Evaluated by Photoluminescence

Photoluminescence from Defects in Be‐Doped GaN

Photoluminescence from Vacancy‐Containing Defects in GaN

Photoluminescence from Be‐Doped GaN Grown by Metal‐Organic Chemical Vapor Deposition

Comparative Analysis of Defects in Mg-Implanted and Mg-Doped GaN Layers on Freestanding GaN Substrates

Photoluminescence related to transition metal and carbon defects in GaN

Linearly polarized photoluminescence of InGaN quantum disks embedded in GaN nanorods

Photoluminescence Line‐Shape Analysis of Highly n‐Type Doped Zincblende GaN

On the phenomenon of large photoluminescence red shift in GaN nanoparticles

Photoluminescence line shape analysis of highly n‐type doped zincblende GaN

In-situ photoluminescence measurements during MOVPE growth of GaN and InGaN MQW structures

Stable and Reversible Photoluminescence from GaN Nanowires in Solution Tuning by Ionic Concentration

Optimization of the Epitaxial Growth of Undoped GaN Waveguides in GaN-Based Laser Diodes Evaluated by Photoluminescence

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