Emergence of a Thermal Hysteresis of Electrical Resistance by Thinning in 1T-TiSe2
- Standort
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Deutsche Nationalbibliothek Frankfurt am Main
- Umfang
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1 Online-Ressource.
- Sprache
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Englisch
- Erschienen in
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Emergence of a Thermal Hysteresis of Electrical Resistance by Thinning in 1T-TiSe2 ; volume:213 ; number:3-4 ; day:28 ; month:9 ; year:2023 ; pages:215-222 ; date:11.2023
Journal of low temperature physics ; 213, Heft 3-4 (28.9.2023), 215-222, 11.2023
- Urheber
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Nomura, Atsushi
Demura, Satoshi
Ohta, Shun
Kobayashi, Sora
Sakata, Hideaki
- Beteiligte Personen und Organisationen
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SpringerLink (Online service)
- DOI
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10.1007/s10909-023-02999-7
- URN
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urn:nbn:de:101:1-2024010810042705743501
- Rechteinformation
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Open Access; Der Zugriff auf das Objekt ist unbeschränkt möglich.
- Letzte Aktualisierung
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15.08.2025, 07:36 MESZ
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Beteiligte
- Nomura, Atsushi
- Demura, Satoshi
- Ohta, Shun
- Kobayashi, Sora
- Sakata, Hideaki
- SpringerLink (Online service)
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Quantum spin liquid signatures in monolayer 1T-NbSe2
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1T-TiSe2 investigated by 2PPE and TR-2PPE : a Correlated Electronic System
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Superconductivity induced by gate-driven hydrogen intercalation in the charge-density-wave compound 1T-TiSe2
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