Numerical simulation of TEM images for In(Ga)As/GaAs quantum dots with various shapes
- Standort
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Deutsche Nationalbibliothek Frankfurt am Main
- Umfang
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Online-Ressource
- Sprache
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Englisch
- Erschienen in
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In: Optical and Quantum Electronics (52:5) - Heidelberg : Springer Nature - Art.-Id. 257
- Ereignis
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Veröffentlichung
- (wo)
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Berlin
- (wer)
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Technische Universität Berlin
- (wann)
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2023
- Urheber
- DOI
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10.14279/depositonce-18134
- Handle
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11303/19338
- URN
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urn:nbn:de:101:1-2023071901572191784037
- Rechteinformation
-
Der Zugriff auf das Objekt ist unbeschränkt möglich.
- Letzte Aktualisierung
-
25.03.2025, 13:51 MEZ
Datenpartner
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Beteiligte
- Maltsi, Anieza
- Niermann, Tore
- Streckenbach, Timo
- Tabelow, Karsten
- Koprucki, Thomas
- Technische Universität Berlin
Entstanden
- 2023
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Lattice expansion in optically excited InAs/GaAs quantum dots
TEM investigations of Ga(Sb,As) quantum dots grown on a seed layer of (In,Ga)As quantum dots
Quantum dots formed in a GaAsAlGaAs quantum ring
Picosecond spin-preserving carrier capture in InGaAs/GaAs quantum dots
MOCVD growth and laser applications of In(Ga)As-GaAS quantum dots
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Structural and compositional analysis of (InGa)(AsSb)/GaAs/GaP Stranski–Krastanov quantum dots
Coherent spectroscopy of InGaAs quantum dots
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