Observation of electric-field-induced structural dislocations in a ferroelectric oxide

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Location: Deutsche Nationalbibliothek Frankfurt am Main

Extent: Online-Ressource

Language: Englisch

Bibliographic citation: In: Nano Letters, 21, 8, S. 3386-3392

Event: Veröffentlichung

(where): Augsburg

(who): Universität Augsburg

(when): 2021

Event: Veröffentlichung

(where): Washington, DC

(who): American Chemical Society (ACS)

(when): 2021

Creator: Evans, Donald
Småbråten, Didrik René
Holstad, Theodor S.
Vullum, Per Erik
Mosberg, Aleksander B.
Yan, Zewu
Bourret, Edith
van Helvoort, Antonius T. J.
Selbach, Sverre M.
Meier, Dennis

DOI: 10.1021/acs.nanolett.0c04816

URN: urn:nbn:de:bvb:384-opus4-959570

Rights: Der Zugriff auf das Objekt ist unbeschränkt möglich.

Last update: 15.08.2025, 7:21 AM CEST

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Associated

Evans, Donald
Småbråten, Didrik René
Holstad, Theodor S.
Vullum, Per Erik
Mosberg, Aleksander B.
Yan, Zewu
Bourret, Edith
van Helvoort, Antonius T. J.
Selbach, Sverre M.
Meier, Dennis
Universität Augsburg
American Chemical Society (ACS)

Time of origin

2021

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Observation of electric-field-induced structural dislocations in a ferroelectric oxide

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Other Objects (12)

Ferroelectric Switching at Symmetry‐Broken Interfaces by Local Control of Dislocations Networks

Ferroelectric hafnium oxide for ferroelectric random-access memories and ferroelectric field-effect transistors

Ferroelectric hafnium oxide for ferroelectric random-access memories and ferroelectric field-effect transistors

Direct observation of space-charge-induced electric fields at oxide grain boundaries

Viscous Mechano‐Electric Response of Ferroelectric Nematic Liquid

Spontaneous electric-polarization topology in confined ferroelectric nematics

Chemical Solution Deposition of Ferroelectric Hafnium Oxide for Future Lead Free Ferroelectric Devices

Arthroscopic Treatment of Perilunate Dislocations and Fracture Dislocations

Next Generation Ferroelectric Memories enabled by Hafnium Oxide

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Ferroelectric hafnium oxide for ferroelectric random-access memories and ferroelectric field-effect transistors

Ferroelectric hafnium oxide for ferroelectric random-access memories and ferroelectric field-effect transistors

Direct observation of space-charge-induced electric fields at oxide grain boundaries

Viscous Mechano‐Electric Response of Ferroelectric Nematic Liquid

Spontaneous electric-polarization topology in confined ferroelectric nematics

Chemical Solution Deposition of Ferroelectric Hafnium Oxide for Future Lead Free Ferroelectric Devices

Arthroscopic Treatment of Perilunate Dislocations and Fracture Dislocations

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Ferroelectric hafnium oxide for ferroelectric random-access memories and ferroelectric field-effect transistors

Ferroelectric hafnium oxide for ferroelectric random-access memories and ferroelectric field-effect transistors

Direct observation of space-charge-induced electric fields at oxide grain boundaries

Viscous Mechano‐Electric Response of Ferroelectric Nematic Liquid

Spontaneous electric-polarization topology in confined ferroelectric nematics

Chemical Solution Deposition of Ferroelectric Hafnium Oxide for Future Lead Free Ferroelectric Devices

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Lanthanum-Doped Hafnium Oxide : A Robust Ferroelectric Material

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