Efficient Gating of Organic Electrochemical Transistors with In‐Plane Gate Electrodes
- Location
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Deutsche Nationalbibliothek Frankfurt am Main
- Extent
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Online-Ressource
- Language
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Englisch
- Bibliographic citation
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Efficient Gating of Organic Electrochemical Transistors with In‐Plane Gate Electrodes ; day:27 ; month:08 ; year:2021 ; extent:9
Advanced Materials Technologies ; (27.08.2021) (gesamt 9)
- Creator
- DOI
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10.1002/admt.202100732
- URN
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urn:nbn:de:101:1-2021082815005572325679
- Rights
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Open Access; Der Zugriff auf das Objekt ist unbeschränkt möglich.
- Last update
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15.08.2025, 7:26 AM CEST
Data provider
This object is provided by:
Deutsche Nationalbibliothek. If you have any questions about the object, please contact the data provider.
Deutsche Nationalbibliothek. If you have any questions about the object, please contact the data provider.
Associated
- Koutsouras, Dimitrios A.
- Torricelli, Fabrizio
- Gkoupidenis, Paschalis
- Blom, P. W. M.
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Optimizing the plasma oxidation of aluminum gate electrodes for ultrathin gate oxides in organic transistors
In-plane gate transistors fabricated by focused ion beam implantation in negative and positive pattern definition
Der Floating-Gate-Transistor
Monolithic In-Plane Integration of Gate-Modulated Switchable Supercapacitors
Monolithic In‐Plane Integration of Gate‐Modulated Switchable Supercapacitors
Switchable Supercapacitors with Transistor‐Like Gating Characteristics (G‐Cap)
Gate-Controlled WSe2 Transistors Using a Buried Triple-Gate Structure
Electrochemical gating of oxide nanowire transistors of low operating voltage
Electrochemical Gating of Oxide Nanowire Transistors at Low Operating Voltage
Advanced Neuromorphic Applications Enabled by Synaptic Ion‐Gating Vertical Transistors
Netzwerksimulation des Insulated Gate Bipolar Transistor (IGBT)
In-Plane-Gate-Transistoren in pseudomorphen Halbleiterstrukturen
Optimizing the plasma oxidation of aluminum gate electrodes for ultrathin gate oxides in organic transistors
In-plane gate transistors fabricated by focused ion beam implantation in negative and positive pattern definition
Der Floating-Gate-Transistor
Monolithic In-Plane Integration of Gate-Modulated Switchable Supercapacitors
Monolithic In‐Plane Integration of Gate‐Modulated Switchable Supercapacitors
Switchable Supercapacitors with Transistor‐Like Gating Characteristics (G‐Cap)
Gate-Controlled WSe2 Transistors Using a Buried Triple-Gate Structure
Electrochemical gating of oxide nanowire transistors of low operating voltage
Electrochemical Gating of Oxide Nanowire Transistors at Low Operating Voltage
Advanced Neuromorphic Applications Enabled by Synaptic Ion‐Gating Vertical Transistors
Netzwerksimulation des Insulated Gate Bipolar Transistor (IGBT)