Emerging Type‐II Superlattices of InAs/InAsSb and InAs/GaSb for Mid‐Wavelength Infrared Photodetectors
Mid‐wavelength infrared (MWIR) photodetectors (PDs) are highly essential for environmental sensing of hazardous gases, security, defense, and medical applications. Mercury cadmium telluride (MCT) materials have been the most used detector in the MWIR range. However, it is plagued by several challenges including toxicity concerns, a high rate of Auger nonradiative recombination, a large band‐to‐band (BTB) tunneling current, nonuniformity, and the need for cryogenic cooling. Theoretically, it is predicted that type‐II superlattice (T2SL) materials can emerge as an alternative with the potential to outperform the current state‐of‐the‐art MCT PDs due to suppression of Auger recombination associated with bandgap engineering and reduced BTB tunneling current caused by the larger effective mass. Based on this theoretical prediction, it is believed that T2SL have the potential to operate at high temperatures and overcome the size, weight, and power consumption limitations of MCT. Herein, a detailed review of the fundamental material properties of T2SL PDs is provided while providing a comparison of the optical and electrical performances of Ga‐free (InAs/InAsSb) and Ga‐based (InAs/GaSb) T2SL PDs. Finally, recent advances in IR detection technologies including focal plane arrays and quantum cascade infrared photodetectors are explored.
- Location
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Deutsche Nationalbibliothek Frankfurt am Main
- Extent
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Online-Ressource
- Language
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Englisch
- Bibliographic citation
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Emerging Type‐II Superlattices of InAs/InAsSb and InAs/GaSb for Mid‐Wavelength Infrared Photodetectors ; day:15 ; month:12 ; year:2021 ; extent:23
Advanced photonics research ; (15.12.2021) (gesamt 23)
- Creator
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Alshahrani, Dhafer O.
Kesaria, Manoj
Anyebe, Ezekiel A.
Srivastava, V.
Huffaker, Diana L.
- DOI
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10.1002/adpr.202100094
- URN
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urn:nbn:de:101:1-2021121614075247211203
- Rights
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Open Access; Der Zugriff auf das Objekt ist unbeschränkt möglich.
- Last update
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15.08.2025, 7:21 AM CEST
Data provider
Deutsche Nationalbibliothek. If you have any questions about the object, please contact the data provider.
Associated
- Alshahrani, Dhafer O.
- Kesaria, Manoj
- Anyebe, Ezekiel A.
- Srivastava, V.
- Huffaker, Diana L.
Other Objects (12)
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Giant g-factors and fully spin-polarized states in metamorphic short-period InAsSb/InSb superlattices
Novel approach to passivation of InAs/GaSb type II superlattice photodetectors
In-plane optical anisotropy of InAs/GaSb superlattices with alternate interfaces
Analysis of Temperature-Dependent Photoluminescence Spectra in Mid-Wavelength Infrared InAs/InAsSb Type-II Superlattice
![Untersuchung der Grenzfläche GaAs(110)-Sb [GaAs-Sb] mit Hilfe der Ramanstreuung](/assets/placeholder/searchResultMediaNoDigitisedMedia.png)
Untersuchung der Grenzfläche GaAs(110)-Sb [GaAs-Sb] mit Hilfe der Ramanstreuung
Metalorganic chemical vapor deposition growth of InAs/GaSb type II superlattices with controllable As x Sb1-xinterfaces
Schaubild XXV. As + Sb - Cu - S.
Electrical Properties of Midwave and Longwave InAs/GaSb Superlattices Grown on GaAs Substrates by Molecular Beam Epitaxy
Monolithic integration of a 10 μm cut-off wavelength InAs/GaSb type-II superlattice diode on GaAs platform
High-temperature operation of electrical injection type-II (GaIn)As/Ga(AsSb)/(GaIn)As “W”-quantum well lasers emitting at 1.3 µm
Improvement the InAs, InSb, GaAs and GaSb surface state by nanoscale wet etching
Ultimate Performance of IB CID T2SLs InAs/GaSb and InAs/InAsSb Longwave Photodetectors for High Operating Temperature Condition
Giant g-factors and fully spin-polarized states in metamorphic short-period InAsSb/InSb superlattices
Novel approach to passivation of InAs/GaSb type II superlattice photodetectors
In-plane optical anisotropy of InAs/GaSb superlattices with alternate interfaces
Analysis of Temperature-Dependent Photoluminescence Spectra in Mid-Wavelength Infrared InAs/InAsSb Type-II Superlattice
Untersuchung der Grenzfläche GaAs(110)-Sb [GaAs-Sb] mit Hilfe der Ramanstreuung
Metalorganic chemical vapor deposition growth of InAs/GaSb type II superlattices with controllable As x Sb1-xinterfaces
Schaubild XXV. As + Sb - Cu - S.
Electrical Properties of Midwave and Longwave InAs/GaSb Superlattices Grown on GaAs Substrates by Molecular Beam Epitaxy
Monolithic integration of a 10 μm cut-off wavelength InAs/GaSb type-II superlattice diode on GaAs platform
High-temperature operation of electrical injection type-II (GaIn)As/Ga(AsSb)/(GaIn)As “W”-quantum well lasers emitting at 1.3 µm
Improvement the InAs, InSb, GaAs and GaSb surface state by nanoscale wet etching
Ultimate Performance of IB CID T2SLs InAs/GaSb and InAs/InAsSb Longwave Photodetectors for High Operating Temperature Condition
Giant g-factors and fully spin-polarized states in metamorphic short-period InAsSb/InSb superlattices
Novel approach to passivation of InAs/GaSb type II superlattice photodetectors
In-plane optical anisotropy of InAs/GaSb superlattices with alternate interfaces
Analysis of Temperature-Dependent Photoluminescence Spectra in Mid-Wavelength Infrared InAs/InAsSb Type-II Superlattice
Untersuchung der Grenzfläche GaAs(110)-Sb [GaAs-Sb] mit Hilfe der Ramanstreuung
Metalorganic chemical vapor deposition growth of InAs/GaSb type II superlattices with controllable As x Sb1-xinterfaces
Schaubild XXV. As + Sb - Cu - S.
Electrical Properties of Midwave and Longwave InAs/GaSb Superlattices Grown on GaAs Substrates by Molecular Beam Epitaxy
Monolithic integration of a 10 μm cut-off wavelength InAs/GaSb type-II superlattice diode on GaAs platform
High-temperature operation of electrical injection type-II (GaIn)As/Ga(AsSb)/(GaIn)As “W”-quantum well lasers emitting at 1.3 µm