Hochschulschrift
First Principles Calculations for the Semiconductor Material Kesterite Cu2ZnSnS4 and Se-containing Derivatives
- Alternative title
-
First Principles Rechnungen für das Halbleitermaterial Kesterite Cu2ZnSnS4 und Se-haltige Derivate
- Location
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Deutsche Nationalbibliothek Frankfurt am Main
- Extent
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Online-Ressource
- Language
-
Englisch
- Notes
-
Berlin, Freie Universität Berlin, Dissertation, 2016
- Classification
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Physik
- Event
-
Veröffentlichung
- (where)
-
Berlin
- (who)
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Freie Universität Berlin
- (when)
-
2016
- Creator
-
Quennet, Marcel
- URN
-
urn:nbn:de:kobv:188-fudissthesis000000103788-2
- Rights
-
Der Zugriff auf das Objekt ist unbeschränkt möglich.
- Last update
-
25.03.2025, 1:43 PM CET
Data provider
This object is provided by:
Deutsche Nationalbibliothek. If you have any questions about the object, please contact the data provider.
Deutsche Nationalbibliothek. If you have any questions about the object, please contact the data provider.
Object type
- Hochschulschrift
Associated
- Quennet, Marcel
- Freie Universität Berlin
Time of origin
- 2016
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Anharmonic Effects in Ordered Kesterite-Type Cu2ZnSnS4
High-pressure behavior of disodered kesterite-type Cu2ZnSnS4
Mechanochemical synthesis and crystal structure evaluation of Na2ZnSnS4
Thermische und elektrische Eigenschaften der funktionellen Halbleiter beta-Ga2O3, Cu2ZnSnS4 und Cu2ZnSnSe4
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Structural trends in off-stoichiometric kesterite type compound Cu2ZnSnSe4 semiconductor
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Calculations
Structure-based design, docking and binding free energy calculations of A366 derivatives as spindlin1 inhibitors
Calculation for High Pressure Behaviour of Potential Solar Cell Materials Cu2FeSnS4 and Cu2MnSnS4
Elektrochemische Legierungsabscheidung zur Herstellung von Cu2ZnSnS4 Dünnschichtsolarzellen
Anharmonic Effects in Ordered Kesterite-Type Cu2ZnSnS4
High-pressure behavior of disodered kesterite-type Cu2ZnSnS4
Mechanochemical synthesis and crystal structure evaluation of Na2ZnSnS4
Thermische und elektrische Eigenschaften der funktionellen Halbleiter beta-Ga2O3, Cu2ZnSnS4 und Cu2ZnSnSe4
Modeling of SiGeSn-based semiconductor heterostructures for optoelectronic applications
Structural trends in off-stoichiometric kesterite type compound Cu2ZnSnSe4 semiconductor
Investigation of GeSn as novel group IV semiconductor for electronic Applications
Investigation of GeSn as Novel Group IV Semiconductor for Electronic Applications
Calculations
Structure-based design, docking and binding free energy calculations of A366 derivatives as spindlin1 inhibitors
Calculation for High Pressure Behaviour of Potential Solar Cell Materials Cu2FeSnS4 and Cu2MnSnS4
Elektrochemische Legierungsabscheidung zur Herstellung von Cu2ZnSnS4 Dünnschichtsolarzellen
Anharmonic Effects in Ordered Kesterite-Type Cu2ZnSnS4
High-pressure behavior of disodered kesterite-type Cu2ZnSnS4
Mechanochemical synthesis and crystal structure evaluation of Na2ZnSnS4
Thermische und elektrische Eigenschaften der funktionellen Halbleiter beta-Ga2O3, Cu2ZnSnS4 und Cu2ZnSnSe4
Modeling of SiGeSn-based semiconductor heterostructures for optoelectronic applications
Structural trends in off-stoichiometric kesterite type compound Cu2ZnSnSe4 semiconductor
Investigation of GeSn as novel group IV semiconductor for electronic Applications
Investigation of GeSn as Novel Group IV Semiconductor for Electronic Applications
Calculations