- Location
-
Deutsche Nationalbibliothek Frankfurt am Main
- ISSN
-
2045-2322
- Extent
-
Online-Ressource
- Language
-
Englisch
- Notes
-
online resource.
- Bibliographic citation
-
High frequency resistive switching behavior of amorphous TiO2 and NiO ; volume:12 ; number:1 ; day:13 ; month:8 ; year:2022 ; pages:1-16 ; date:12.2022
Scientific reports ; 12, Heft 1 (13.8.2022), 1-16, 12.2022
- Creator
-
Bulja, Senad
Kopf, Rose
Tate, Al
Cappuzzo, Mark
Kozlov, Dmitry
Claussen, Holger
Wiegner, Dirk
Templ, Wolfgang
Mirshekar-Syahkal, Dariush
- Contributor
-
SpringerLink (Online service)
- DOI
-
10.1038/s41598-022-16907-8
- URN
-
urn:nbn:de:101:1-2022103120015108914928
- Rights
-
Open Access; Der Zugriff auf das Objekt ist unbeschränkt möglich.
- Last update
-
15.08.2025, 7:38 AM CEST
Data provider
This object is provided by:
Deutsche Nationalbibliothek. If you have any questions about the object, please contact the data provider.
Deutsche Nationalbibliothek. If you have any questions about the object, please contact the data provider.
Associated
- Bulja, Senad
- Kopf, Rose
- Tate, Al
- Cappuzzo, Mark
- Kozlov, Dmitry
- Claussen, Holger
- Wiegner, Dirk
- Templ, Wolfgang
- Mirshekar-Syahkal, Dariush
- SpringerLink (Online service)
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Integration and characterization of atomic layer deposited TiO2 thin films for resistive switching applications
Transition between bipolar and abnormal bipolar resistive switching in amorphous oxides with a mobility edge
Germanium sulphide based resistive switching devices
Resistive switching in diamondoid thin films
Resistive switching in TiO2 thin films
Resistive switching of chemically synthesized TiO2 nanoparticles
Stateful characterization of resistive switching TiO2 with electron beam induced currents
Resistive Switching of Sub-10 nm TiO2 Nanoparticle Self-Assembled Monolayers
Oxynitride Amorphous Carbon Layer for Electrically and Thermally Robust Bipolar Resistive Switching
Publisher Correction: Stateful characterization of resistive switching TiO2 with electron beam induced currents
Filament Dynamics in Resistive Switching
Integration and characterization of atomic layer deposited TiO2 thin films for resistive switching applications
Integration and characterization of atomic layer deposited TiO2 thin films for resistive switching applications
Transition between bipolar and abnormal bipolar resistive switching in amorphous oxides with a mobility edge
Germanium sulphide based resistive switching devices