High electron mobility and low carrier concentration of hydrothermally grown ZnO thin films on seeded a-plane sapphire at low temperature
- Location
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Deutsche Nationalbibliothek Frankfurt am Main
- ISSN
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1556-276X
- Extent
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Online-Ressource
- Language
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Englisch
- Notes
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online resource.
- Bibliographic citation
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High electron mobility and low carrier concentration of hydrothermally grown ZnO thin films on seeded a-plane sapphire at low temperature ; volume:10 ; number:1 ; day:22 ; month:1 ; year:2015 ; pages:1-10 ; date:12.2015
Nanoscale research letters ; 10, Heft 1 (22.1.2015), 1-10, 12.2015
- Creator
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Jayah, Nurul Azzyaty
Yahaya, Hafizal
Mahmood, Mohamad Rusop
Terasako, Tomoaki
Yasui, Kanji
Hashim, Abdul Manaf
- Contributor
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SpringerLink (Online service)
- DOI
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10.1186/s11671-014-0715-0
- URN
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urn:nbn:de:101:1-2021082418492629819822
- Rights
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Open Access; Der Zugriff auf das Objekt ist unbeschränkt möglich.
- Last update
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14.08.2025, 10:49 AM CEST
Data provider
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Associated
- Jayah, Nurul Azzyaty
- Yahaya, Hafizal
- Mahmood, Mohamad Rusop
- Terasako, Tomoaki
- Yasui, Kanji
- Hashim, Abdul Manaf
- SpringerLink (Online service)
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Plate III. Sapphire
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Low-temperature solution growth of ZnO nanotube arrays
Microstructural characterization of yttria-stabilized zirconia thermal barrier coatings grown on sapphire substrates
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Optimizing GaN (11 2 ‾ 2) hetero‐epitaxial templates grown on (10 1 ‾ 0) sapphire
Plate III. Sapphire
Ultra‐Low Threshold Titanium‐Doped Sapphire Whispering‐Gallery Laser
Low-temperature solution growth of ZnO nanotube arrays
Microstructural characterization of yttria-stabilized zirconia thermal barrier coatings grown on sapphire substrates
Infrared Reflectance Analysis of Epitaxial n-Type Doped GaN Layers Grown on Sapphire
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Low temperature grown inP-based HFET : characterization and modelling
Low cost solar cells from fast grown silicon ribbon materials
Preparation and optimization of low-temperature-grown GaAs photomixers
Selective growth of tilted ZnO nanoneedles and nanowires by PLD of patterned sapphire substrates
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Optimizing GaN (11 2 ‾ 2) hetero‐epitaxial templates grown on (10 1 ‾ 0) sapphire