Investigation of photosensitive and photodetector characteristics of n-TPA-IFA/p-Si heterojunction structure

Location
Deutsche Nationalbibliothek Frankfurt am Main
Extent
1 Online-Ressource.
Language
Englisch

Bibliographic citation
Investigation of photosensitive and photodetector characteristics of n-TPA-IFA/p-Si heterojunction structure ; volume:35 ; number:15 ; day:28 ; month:5 ; year:2024 ; pages:1-19 ; date:5.2024
Journal of materials science / Materials in electronics ; 35, Heft 15 (28.5.2024), 1-19, 5.2024

Creator
Çavdar, Şükrü
Oruç, Pınar
Eymur, Serkan
Tuğluoğlu, Nihat
Contributor
SpringerLink (Online service)

DOI
10.1007/s10854-024-12749-4
URN
urn:nbn:de:101:1-2408132120402.917721059541
Rights
Open Access; Der Zugriff auf das Objekt ist unbeschränkt möglich.
Last update
15.08.2025, 10:25 AM CEST

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Associated

  • Çavdar, Şükrü
  • Oruç, Pınar
  • Eymur, Serkan
  • Tuğluoğlu, Nihat
  • SpringerLink (Online service)

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