Properties of atmospheric pressure plasma oxidized layers on silicon wafers
Abstract: In this research a new process of plasma oxidation of crystalline silicon at room temperature is studied. The plasma oxidation was carried out using Diffuse Coplanar Surface Barrier Discharge (DCSBD) operating in ambient air and oxygen at atmospheric pressure. The influence of exposition time, plasma parameters and crystallographic orientation of silicon on oxidized layers and their dielectric properties were investigated. Thickness, structure and morphology of these layers were studied by ellipsometry, infrared absorption spectroscopy and scanning electron microscopy. During the treatment time, from 1 to 30 minutes, oxidized layers were obtained with thickness from 1 to 10 nm. Their roughness depends on the crystallographic orientation of silicon surface and exposure time. Electrical parameters of the prepared layers indicate the presence of an intermediate layer between silicon substrate and the oxidized layer.
- Location
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Deutsche Nationalbibliothek Frankfurt am Main
- Extent
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Online-Ressource
- Language
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Englisch
- Bibliographic citation
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Properties of atmospheric pressure plasma oxidized layers on silicon wafers ; volume:13 ; number:1 ; year:2014 ; extent:6
Open chemistry ; 13, Heft 1 (2014) (gesamt 6)
- Creator
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Skácelová, Dana
Sládek, Petr
Sťahel, Pavel
Pawera, Lukáš
Haničinec, Martin
Meichsner, Jürgen
Černák, Mirko
- DOI
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10.1515/chem-2015-0047
- URN
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urn:nbn:de:101:1-2410151803018.374778923431
- Rights
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Open Access; Der Zugriff auf das Objekt ist unbeschränkt möglich.
- Last update
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15.08.2025, 7:33 AM CEST
Data provider
Deutsche Nationalbibliothek. If you have any questions about the object, please contact the data provider.
Associated
- Skácelová, Dana
- Sládek, Petr
- Sťahel, Pavel
- Pawera, Lukáš
- Haničinec, Martin
- Meichsner, Jürgen
- Černák, Mirko
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