The influence of structural disorder and phonon on metal-to-insulator transition of VO 2
- Location
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Deutsche Nationalbibliothek Frankfurt am Main
- ISSN
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2045-2322
- Extent
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Online-Ressource
- Language
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Englisch
- Notes
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online resource.
- Bibliographic citation
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The influence of structural disorder and phonon on metal-to-insulator transition of VO 2 ; volume:7 ; number:1 ; day:1 ; month:11 ; year:2017 ; pages:1-9 ; date:12.2017
Scientific reports ; 7, Heft 1 (1.11.2017), 1-9, 12.2017
- Creator
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Hwang, In-Hui
Jin, Zhenlan
Park, Chang-In
Han, Sang-Wook
- Contributor
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SpringerLink (Online service)
- DOI
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10.1038/s41598-017-14235-w
- URN
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urn:nbn:de:101:1-2019070800263827393981
- Rights
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Open Access; Der Zugriff auf das Objekt ist unbeschränkt möglich.
- Last update
-
15.08.2025, 7:35 AM CEST
Data provider
This object is provided by:
Deutsche Nationalbibliothek. If you have any questions about the object, please contact the data provider.
Deutsche Nationalbibliothek. If you have any questions about the object, please contact the data provider.
Associated
- Hwang, In-Hui
- Jin, Zhenlan
- Park, Chang-In
- Han, Sang-Wook
- SpringerLink (Online service)
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Electronic response of a Mott insulator at a current-induced insulator-to-metal transition
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Disorder induced metal insulator transition in anisotropic systems
Disorder induced metal insulator transition in anisotropic systems
Femtosecond terahertz studies of many body correlations : from ultrafast phonon plasmon dynamics to an insulator metal transition
Magnetic control of phonon transport in magnetic insulator thulium iron garnet
Phase-space visualization of a metal–insulator transition
Phase space visualisation of a metal-insulator transition
The Mott metal insulator transition
Observation of an exotic insulator to insulator transition upon electron doping the Mott insulator CeMnAsO
Phonon-induced disorder in dynamics of optically pumped metals from nonlinear electron-phonon coupling
Electronic response of a Mott insulator at a current-induced insulator-to-metal transition
Modulation of VO 2 Metal–Insulator Transition by Ferroelectric HfO 2 Gate Insulator