Monografie
Chip designs for high efficiency III-nitride based ultraviolet light emitting diodes with enhanced light extraction
- Language
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Englisch
- Notes
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Berlin, Technische Universität Berlin, Diss., 2015
- Identifier
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1077040148
Subject
Hochschulschrift
Contributor
- URN
- Rights
-
Der Zugriff auf das Objekt ist unbeschränkt möglich.
- Last update
-
26.01.2023, 1:54 PM CET
Object type
- Monografie
Associated
- Lobo Ploch, Neysha
- Kneissl, Michael
- Lehmann, Michael
- Döhler, Gottfried
Other Objects (12)
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Radiative Recombination and Carrier Injection Efficiencies in 265 nm Deep Ultraviolet Light‐Emitting Diodes Grown on AlN/Sapphire Templates with Different Defect Densities
Design and fabrication of GaN-based laser diodes for single-mode and narrow-linewidth applications
MOVPE growth and characterization of (In,Ga)N quantum structures for laser diodes emitting at 440 nm
Heterostructure design and epitaxial growth of AlGaN-based light emitting diodes emitting in the UVC wavelength range
Efficient frequency doubling of near-infrared diode lasers using quasi phase-matched waveguides
Structure and preparation of polar and semipolar InN surfaces
Status and Prospects of AlN Templates on Sapphire for Ultraviolet Light‐Emitting Diodes
Light extraction efficiency and internal quantum efficiency of fully UVC-transparent AlGaN based LEDs
Longitudinale Modenfilter für Kantenemitter im roten Spektralbereich
Polarity control and doping in aluminum gallium nitride
Effect of Inhomogeneous Broadening in Ultraviolet III-Nitride Light-Emitting Diodes
Metallorganische Gasphasenepitaxie von semipolaren III-Nitrid Heterostrukturen und Lichtemittern
Radiative Recombination and Carrier Injection Efficiencies in 265 nm Deep Ultraviolet Light‐Emitting Diodes Grown on AlN/Sapphire Templates with Different Defect Densities
Design and fabrication of GaN-based laser diodes for single-mode and narrow-linewidth applications
MOVPE growth and characterization of (In,Ga)N quantum structures for laser diodes emitting at 440 nm
Heterostructure design and epitaxial growth of AlGaN-based light emitting diodes emitting in the UVC wavelength range
Efficient frequency doubling of near-infrared diode lasers using quasi phase-matched waveguides
Structure and preparation of polar and semipolar InN surfaces
Status and Prospects of AlN Templates on Sapphire for Ultraviolet Light‐Emitting Diodes
Light extraction efficiency and internal quantum efficiency of fully UVC-transparent AlGaN based LEDs
Longitudinale Modenfilter für Kantenemitter im roten Spektralbereich
Polarity control and doping in aluminum gallium nitride
Effect of Inhomogeneous Broadening in Ultraviolet III-Nitride Light-Emitting Diodes
Metallorganische Gasphasenepitaxie von semipolaren III-Nitrid Heterostrukturen und Lichtemittern
Radiative Recombination and Carrier Injection Efficiencies in 265 nm Deep Ultraviolet Light‐Emitting Diodes Grown on AlN/Sapphire Templates with Different Defect Densities
Design and fabrication of GaN-based laser diodes for single-mode and narrow-linewidth applications
MOVPE growth and characterization of (In,Ga)N quantum structures for laser diodes emitting at 440 nm
Heterostructure design and epitaxial growth of AlGaN-based light emitting diodes emitting in the UVC wavelength range
Efficient frequency doubling of near-infrared diode lasers using quasi phase-matched waveguides
Structure and preparation of polar and semipolar InN surfaces
Status and Prospects of AlN Templates on Sapphire for Ultraviolet Light‐Emitting Diodes
Light extraction efficiency and internal quantum efficiency of fully UVC-transparent AlGaN based LEDs