Van der Waals junction field effect transistors with both n- and p-channel transition metal dichalcogenides

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Location: Deutsche Nationalbibliothek Frankfurt am Main

ISSN: 2397-7132

Extent: Online-Ressource

Language: Englisch

Notes: online resource.

Bibliographic citation: Van der Waals junction field effect transistors with both n- and p-channel transition metal dichalcogenides ; volume:2 ; number:1 ; day:5 ; month:11 ; year:2018 ; pages:1-7 ; date:12.2018
npj 2D materials and applications ; 2, Heft 1 (5.11.2018), 1-7, 12.2018

Classification: Elektrotechnik, Elektronik

Creator: Lim, June Yeong
Kim, Minju
Jeong, Yeonsu
Ko, Kyeong Rok
Yu, Sanghyuck
Shin, Hyung Gon
Moon, Jae Young
Choi, Young Jai
Yi, Yeonjin
Kim, Taekyeong
Im, Seongil

Contributor: SpringerLink (Online service)

DOI: 10.1038/s41699-018-0082-2

URN: urn:nbn:de:101:1-2018121823511502988190

Rights: Open Access; Der Zugriff auf das Objekt ist unbeschränkt möglich.

Last update: 14.08.2025, 10:47 AM CEST

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Associated

Lim, June Yeong
Kim, Minju
Jeong, Yeonsu
Ko, Kyeong Rok
Yu, Sanghyuck
Shin, Hyung Gon
Moon, Jae Young
Choi, Young Jai
Yi, Yeonjin
Kim, Taekyeong
Im, Seongil
SpringerLink (Online service)

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Van der Waals junction field effect transistors with both n- and p-channel transition metal dichalcogenides

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Other Objects (12)

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