Modeling of polarization reversal-induced interface sheet charge in wurtzite-type AlScN/GaN heterostructures
Abstract: In this work, the value and the polarity of the spontaneous and piezoelectric polarization have been investigated, as the use of two different
reference structures for wurtzite-type group-III nitrides, namely, the zinc-blende and the layered-hexagonal crystal lattice, have resulted in
different predictions. It was found that although the differences in value and polarity of the polarization for heterostructures such as wurtzite
Al 1−xScxN/GaN lead to similar interface sheet charges, a significant mismatch is observed when polarization reversal is considered. The
interface sheet charge predicted before and after the polarization reversal in the wurtzite Al1−xScxN layer on GaN using the zinc-blende
lattice as a reference predominantly shows a change in sign. When using the layered-hexagonal lattice as a reference, not only is the same
polarity of the interface sheet charge maintained after polarization reversal, but it is even 30 times larger. In this case, the giant and positive
spontaneous polarization values for metal-polar Al 1−xScxN extracted from the ferroelectric switching, as well as the alignment of the piezo-
electric polarization to it, were observed to be consistent with the predictions referenced to the layered-hexagonal lattice. Thus, it is con-
cluded that the layered-hexagonal reference is not only more suitable for predicting the ferroelectric properties of wurtzite Al 1−xScxN but
should also be the correct reference when considering polarization reversal in heterostructures. If the significant increase in the interface
sheet charge after polarization reversal is experimentally detected, it will allow the design and fabrication of novel devices for future high-
frequency and power electronics applications
- Location
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Deutsche Nationalbibliothek Frankfurt am Main
- Extent
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Online-Ressource
- Language
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Englisch
- Notes
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Journal of applied physics. - 135, 15 (2024) , 155702, ISSN: 1089-7550
- Keyword
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Nitride
Ferroelektrische Heterostruktur
- Event
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Veröffentlichung
- (where)
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Freiburg
- (who)
-
Universität
- (when)
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2024
- Creator
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Yassine, Mohamed
Yassine, Ali
Nair, Akash
Sundarapandian, Balasubramanian
Afshar, Niloofar
Kirste, Lutz
Fichtner, Simon
Ambacher, Oliver
- Contributor
- DOI
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10.1063/5.0190885
- URN
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urn:nbn:de:bsz:25-freidok-2466004
- Rights
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Open Access; Der Zugriff auf das Objekt ist unbeschränkt möglich.
- Last update
-
14.08.2025, 10:48 AM CEST
Data provider
Deutsche Nationalbibliothek. If you have any questions about the object, please contact the data provider.
Associated
- Yassine, Mohamed
- Yassine, Ali
- Nair, Akash
- Sundarapandian, Balasubramanian
- Afshar, Niloofar
- Kirste, Lutz
- Fichtner, Simon
- Ambacher, Oliver
- Fraunhofer-Institut für Angewandte Festkörperphysik
- Universität
Time of origin
- 2024
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