Effects of H2 High-pressure Annealing on HfO2/Al2O3/In0.53Ga0.47As Capacitors: Chemical Composition and Electrical Characteristics
- Standort
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Deutsche Nationalbibliothek Frankfurt am Main
- ISSN
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2045-2322
- Umfang
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Online-Ressource
- Sprache
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Englisch
- Anmerkungen
-
online resource.
- Erschienen in
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Effects of H2 High-pressure Annealing on HfO2/Al2O3/In0.53Ga0.47As Capacitors: Chemical Composition and Electrical Characteristics ; volume:7 ; number:1 ; day:29 ; month:8 ; year:2017 ; pages:1-7 ; date:12.2017
Scientific reports ; 7, Heft 1 (29.8.2017), 1-7, 12.2017
- Urheber
-
Choi, Sungho
An, Youngseo
Lee, Changmin
Song, Jeongkeun
Nguyen, Manh-Cuong
Byun, Young-Chul
Choi, Rino
McIntyre, Paul C.
Kim, Hyoungsub
- Beteiligte Personen und Organisationen
-
SpringerLink (Online service)
- DOI
-
10.1038/s41598-017-09888-6
- URN
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urn:nbn:de:101:1-2019102015452565721307
- Rechteinformation
-
Open Access; Der Zugriff auf das Objekt ist unbeschränkt möglich.
- Letzte Aktualisierung
-
15.08.2025, 07:29 MESZ
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Beteiligte
- Choi, Sungho
- An, Youngseo
- Lee, Changmin
- Song, Jeongkeun
- Nguyen, Manh-Cuong
- Byun, Young-Chul
- Choi, Rino
- McIntyre, Paul C.
- Kim, Hyoungsub
- SpringerLink (Online service)
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Annealing induced void formation in epitaxial Al thin films on sapphire (α-Al2O3)
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Rules for capacitors, Part 2.. Specifications for safety capacitors
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