Effects of H2 High-pressure Annealing on HfO2/Al2O3/In0.53Ga0.47As Capacitors: Chemical Composition and Electrical Characteristics
- Location
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Deutsche Nationalbibliothek Frankfurt am Main
- ISSN
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2045-2322
- Extent
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Online-Ressource
- Language
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Englisch
- Notes
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online resource.
- Bibliographic citation
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Effects of H2 High-pressure Annealing on HfO2/Al2O3/In0.53Ga0.47As Capacitors: Chemical Composition and Electrical Characteristics ; volume:7 ; number:1 ; day:29 ; month:8 ; year:2017 ; pages:1-7 ; date:12.2017
Scientific reports ; 7, Heft 1 (29.8.2017), 1-7, 12.2017
- Creator
-
Choi, Sungho
An, Youngseo
Lee, Changmin
Song, Jeongkeun
Nguyen, Manh-Cuong
Byun, Young-Chul
Choi, Rino
McIntyre, Paul C.
Kim, Hyoungsub
- Contributor
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SpringerLink (Online service)
- DOI
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10.1038/s41598-017-09888-6
- URN
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urn:nbn:de:101:1-2019102015452565721307
- Rights
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Open Access; Der Zugriff auf das Objekt ist unbeschränkt möglich.
- Last update
-
15.08.2025, 7:29 AM CEST
Data provider
This object is provided by:
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Deutsche Nationalbibliothek. If you have any questions about the object, please contact the data provider.
Associated
- Choi, Sungho
- An, Youngseo
- Lee, Changmin
- Song, Jeongkeun
- Nguyen, Manh-Cuong
- Byun, Young-Chul
- Choi, Rino
- McIntyre, Paul C.
- Kim, Hyoungsub
- SpringerLink (Online service)
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