1/f Noise Characterization of Bilayer MoS 2 Field‐Effect Transistors on Paper with Inkjet‐Printed Contacts and hBN Dielectrics
- Location
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Deutsche Nationalbibliothek Frankfurt am Main
- Extent
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Online-Ressource
- Language
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Englisch
- Bibliographic citation
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1/f Noise Characterization of Bilayer MoS 2 Field‐Effect Transistors on Paper with Inkjet‐Printed Contacts and hBN Dielectrics ; day:29 ; month:05 ; year:2021 ; extent:8
Advanced electronic materials ; (29.05.2021) (gesamt 8)
- Creator
-
Pimpolari, Lorenzo
Calabrese, Gabriele
Conti, Silvia
Worsley, Robyn
Majee, Subimal
Polyushkin, Dmitry K.
Paur, Matthias
Casiraghi, Cinzia
Müller, Thomas
Iannaccone, Giuseppe
Macucci, Massimo
Fiori, Gianluca
- DOI
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10.1002/aelm.202100283
- URN
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urn:nbn:de:101:1-2021052915223756351710
- Rights
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Open Access; Der Zugriff auf das Objekt ist unbeschränkt möglich.
- Last update
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14.08.2025, 10:55 AM CEST
Data provider
This object is provided by:
Deutsche Nationalbibliothek. If you have any questions about the object, please contact the data provider.
Deutsche Nationalbibliothek. If you have any questions about the object, please contact the data provider.
Associated
- Pimpolari, Lorenzo
- Calabrese, Gabriele
- Conti, Silvia
- Worsley, Robyn
- Majee, Subimal
- Polyushkin, Dmitry K.
- Paur, Matthias
- Casiraghi, Cinzia
- Müller, Thomas
- Iannaccone, Giuseppe
- Macucci, Massimo
- Fiori, Gianluca
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