Hochschulschrift
Spontaneous recombination in group-III nitride quantum wells
- Standort
-
Deutsche Nationalbibliothek Frankfurt am Main
- Maße
-
21 cm
- Umfang
-
VIII, 112 S.
- Sprache
-
Englisch
- Anmerkungen
-
graph. Darst.
Braunschweig, Techn. Univ., Diss., 2001 (Nicht für den Austausch)
- Schlagwort
-
Drei-Fünf-Halbleiter
Nitride
Quantenwell
Piezoelektrizität
Optische Eigenschaft
- Urheber
-
Im, Jin Seo
- Inhaltsverzeichnis
- Rechteinformation
-
Bei diesem Objekt liegt nur das Inhaltsverzeichnis digital vor. Der Zugriff darauf ist unbeschränkt möglich.
- Letzte Aktualisierung
-
11.06.2025, 14:25 MESZ
Datenpartner
Dieses Objekt wird bereitgestellt von:
Deutsche Nationalbibliothek. Bei Fragen zum Objekt wenden Sie sich bitte an den Datenpartner.
Deutsche Nationalbibliothek. Bei Fragen zum Objekt wenden Sie sich bitte an den Datenpartner.
Objekttyp
- Hochschulschrift
Beteiligte
- Im, Jin Seo
Ähnliche Objekte (12)
Spontaneous recombination in group-III nitride quantum wells
Recombination Dynamics in III-Nitride Quantum Wells of Various Crystal Orientations
Group III-Nitride Nanowires as Multifunctional Optical Biosensors
Nucleation and growth of group III-nitride nanowires
Nucleation and growth of group III-nitride nanowires
Characterization of group III-nitride nanowires for bio-electrochemical sensors
Characterization of group IIInitride nanowires for bioelectrochemical sensors
Germanium doping of aluminum-containing cubic group III-nitride heterostructures
Local charge carrier diffusion and recombination in InGaN quantum wells
Single-crossover recombination and ancestral recombination trees
Mathematical model of spontaneous potential well-logging and its numerical solutions
Growth and characterisation of group III nitride based nanowires for devices
Spontaneous recombination in group-III nitride quantum wells
Recombination Dynamics in III-Nitride Quantum Wells of Various Crystal Orientations
Group III-Nitride Nanowires as Multifunctional Optical Biosensors
Nucleation and growth of group III-nitride nanowires
Nucleation and growth of group III-nitride nanowires
Characterization of group III-nitride nanowires for bio-electrochemical sensors
Characterization of group IIInitride nanowires for bioelectrochemical sensors
Germanium doping of aluminum-containing cubic group III-nitride heterostructures
Local charge carrier diffusion and recombination in InGaN quantum wells
Single-crossover recombination and ancestral recombination trees
Mathematical model of spontaneous potential well-logging and its numerical solutions
Growth and characterisation of group III nitride based nanowires for devices
Spontaneous recombination in group-III nitride quantum wells
Recombination Dynamics in III-Nitride Quantum Wells of Various Crystal Orientations
Group III-Nitride Nanowires as Multifunctional Optical Biosensors
Nucleation and growth of group III-nitride nanowires
Nucleation and growth of group III-nitride nanowires
Characterization of group III-nitride nanowires for bio-electrochemical sensors
Characterization of group IIInitride nanowires for bioelectrochemical sensors
Germanium doping of aluminum-containing cubic group III-nitride heterostructures
Local charge carrier diffusion and recombination in InGaN quantum wells
Single-crossover recombination and ancestral recombination trees
Mathematical model of spontaneous potential well-logging and its numerical solutions