The Rise of HgTe Colloidal Quantum Dots for Infrared Optoelectronics
Abstract: Among materials produced as colloidal quantum dots (CQDs), HgTe has a special status being the only material covering the whole infrared range from the visible to the THz (0.7–100 µm). This unique property resulting from its electronic structure, combined with an air stability and a capacity for charge conduction has generated consistent and massive efforts to produce and improve HgTe CQDs over the past two decades. Meanwhile, HgTe CQDs offer an infrared platform more advanced than any other colloidal alternatives in the mid‐wave infrared regarding their integration into advanced photonic and optoelectronic applications. Here, the latest developments of HgTe CQDs relative to the material's growth, electron structure modelling, its integration into photonic structures and its transfer as the active material from single element devices toward complex sensors and infrared imagers are reviewed. Finally, a discussion about the potential of this material for industry, rising new challenges beyond economical and production considerations at low technological readiness level, relative to the material and device design, is also included.
- Standort
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Deutsche Nationalbibliothek Frankfurt am Main
- Umfang
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Online-Ressource
- Sprache
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Englisch
- Erschienen in
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The Rise of HgTe Colloidal Quantum Dots for Infrared Optoelectronics ; day:18 ; month:07 ; year:2024 ; extent:32
Advanced functional materials ; (18.07.2024) (gesamt 32)
- Urheber
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Sergeeva, Kseniia A.
Zhang, Huichen
Portniagin, Arsenii S.
Bossavit, Erwan
Mu, Ge
Kershaw, Stephen V.
Ithurria, Sandrine
Guyot‐Sionnest, Philippe
Keuleyan, Sean
Delerue, Christophe
Tang, Xin
Rogach, Andrey L.
Lhuillier, Emmanuel
- DOI
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10.1002/adfm.202405307
- URN
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urn:nbn:de:101:1-2407181437108.511971264546
- Rechteinformation
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Open Access; Der Zugriff auf das Objekt ist unbeschränkt möglich.
- Letzte Aktualisierung
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2025-08-14T10:58:10+0200
Datenpartner
Deutsche Nationalbibliothek. Bei Fragen zum Objekt wenden Sie sich bitte an den Datenpartner.
Beteiligte
- Sergeeva, Kseniia A.
- Zhang, Huichen
- Portniagin, Arsenii S.
- Bossavit, Erwan
- Mu, Ge
- Kershaw, Stephen V.
- Ithurria, Sandrine
- Guyot‐Sionnest, Philippe
- Keuleyan, Sean
- Delerue, Christophe
- Tang, Xin
- Rogach, Andrey L.
- Lhuillier, Emmanuel