Ferroelectricity‐Enhanced Piezo‐Phototronic Effect in 2D V‐Doped ZnO Nanosheets

Abstract: Emerging 2D electronic materials have shown great potential for regulating and controlling optoelectronic processes. A 2D ferroelectric semiconductor coupled with the piezo‐phototronic effect may bring unprecedented functional characteristics. Here, a heterojunction photodetector made of p‐Si/V‐doped‐ferroelectric‐ZnO 2D nanosheets (FESZ‐PD) is fabricated, and the ferroelectricity‐enhanced piezo‐phototronic effect on the photoresponse behavior of the FESZ‐PD is carefully investigated. By introducing the ferroelectricity and the piezo‐phototronic effect, improved current rectification performance is achieved and the photoresponse performance of the heterojunction is enhanced in a broad spectral range. The applied voltage bias during measurement naturally causes ferroelectric spontaneous polarizations to align, resulting in a change in band structure near the interface and the local piezo‐phototronic effect. The modulated energy band promotes the generation, separation, and transportation efficiency of photogenerated carriers greatly. Compared with the Si/ZnO 2D nanosheets photodetector without ferroelectricity under strain‐free conditions, the photoresponsivity R of the FESZ‐PD increases by 2.4 times when applying a −0.20‰ compressive strain at +1 V forward bias. These results confirm the feasibility of coupling the ferroelectricity with the piezo‐phototronic effect in 2D ferroelectric materials to enhance the photoresponse behavior, which provides a good way to enable the development of high‐performance electronic and optoelectronic devices.

Location
Deutsche Nationalbibliothek Frankfurt am Main
Extent
Online-Ressource
Language
Englisch

Bibliographic citation
Ferroelectricity‐Enhanced Piezo‐Phototronic Effect in 2D V‐Doped ZnO Nanosheets ; volume:6 ; number:16 ; year:2019 ; extent:8
Advanced science ; 6, Heft 16 (2019) (gesamt 8)

Creator
Dai, Yejing
Wu, Changsheng
Wu, Zhiyi
Zhao, Zhihao
Li, Li
Lu, Yang
Wang, Zhong Lin

DOI
10.1002/advs.201900314
URN
urn:nbn:de:101:1-2022080306444165367652
Rights
Open Access; Der Zugriff auf das Objekt ist unbeschränkt möglich.
Last update
15.08.2025, 7:22 AM CEST

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Associated

  • Dai, Yejing
  • Wu, Changsheng
  • Wu, Zhiyi
  • Zhao, Zhihao
  • Li, Li
  • Lu, Yang
  • Wang, Zhong Lin

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