High-performance III-V MOSFET with nano-stacked high-k gate dielectric and 3D fin-shaped structure

Location
Deutsche Nationalbibliothek Frankfurt am Main
ISSN
1556-276X
Extent
Online-Ressource
Language
Englisch
Notes
online resource.

Bibliographic citation
High-performance III-V MOSFET with nano-stacked high-k gate dielectric and 3D fin-shaped structure ; volume:7 ; number:1 ; day:1 ; month:8 ; year:2012 ; pages:1-5 ; date:12.2012
Nanoscale research letters ; 7, Heft 1 (1.8.2012), 1-5, 12.2012

Classification
Elektrotechnik, Elektronik

Creator
Chen, Szu-Hung
Liao, Wen-Shiang
Yang, Hsin-Chia
Wang, Shea-Jue
Liaw, Yue-Gie
Wang, Hao
Gu, Haoshuang
Wang, Mu-Chun
Contributor
SpringerLink (Online service)

DOI
10.1186/1556-276X-7-431
URN
urn:nbn:de:101:1-2021082807044296811038
Rights
Open Access; Der Zugriff auf das Objekt ist unbeschränkt möglich.
Last update
14.08.2025, 10:58 AM CEST

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Associated

  • Chen, Szu-Hung
  • Liao, Wen-Shiang
  • Yang, Hsin-Chia
  • Wang, Shea-Jue
  • Liaw, Yue-Gie
  • Wang, Hao
  • Gu, Haoshuang
  • Wang, Mu-Chun
  • SpringerLink (Online service)

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