Influence of AlOx Interlayers on LeTID Kinetics in Ga-Doped Cz-Si
Abstract: Light and elevated temperature-induced degradation (LeTID) is causing a reduction in efficiency especially in p-type silicon based solar cells. It is assumed to be strongly influenced by the hydrogen content in the bulk material. The presented work focuses on the impact of differently thick (5-25 nm) atomic layer-deposited aluminum oxide (AlOx) interlayers underneath the hydrogen-rich silicon nitride (SiNy:H) capping layer. The interlayer acts as a diffusion barrier for H during the firing step. It is demonstrated that the AlOx interlayer has a comparable effect on the LeTID kinetics in Ga-doped Cz-Si (Cz-Si:Ga) as it is observed in B-doped Cz-Si (Cz-Si:B). Additionally, it substantially minimizes lifetime degradation in the Cz-Si:Ga sample. With a determined ratio of electron to hole capture cross sections k=26(3), the degradation phenomena are attributed to the LeTID kinetics. Deposition of AlOx barrier layers exceeding 10 nm in thickness does not yield additional positive effect.... https://www.tib-op.org/ojs/index.php/siliconpv/article/view/842
- Location
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Deutsche Nationalbibliothek Frankfurt am Main
- Extent
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Online-Ressource
- Language
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Englisch
- Bibliographic citation
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Influence of AlOx Interlayers on LeTID Kinetics in Ga-Doped Cz-Si ; volume:1 ; year:2023
SiliconPV conference proceedings ; 1 (2023)
- Creator
- DOI
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10.52825/siliconpv.v1i.842
- URN
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urn:nbn:de:101:1-2406241123222.011659026627
- Rights
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Open Access; Der Zugriff auf das Objekt ist unbeschränkt möglich.
- Last update
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14.08.2025, 10:45 AM CEST
Data provider
Deutsche Nationalbibliothek. If you have any questions about the object, please contact the data provider.
Associated
- Kamphues, Joshua
- Schmid, Andreas
- Fischer-Süßlin, Ronja
- Hahn, Giso
- Geml, Fabian
Other Objects (12)
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Impact of Hydrogen in Ga‐Doped Silicon on Maximum LeTID Defect Density
Firing and gettering dependence of effective defect density in material exhibiting LeTID
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Stability test on Cz and Tri-Silicon wafers with different surface morphologies
Regeneration of boron-oxygen related degradation in Cz-Si PERC-type solar cells at high temperatures
Influence of dielectric layers and thermal load on LeTID
Does LeTID occur in c-Si even without a firing step?
Impact of Hydrogen in Ga-Doped Silicon on Maximum LeTID Defect Density
PECVD SixCy as Barrier Layer Against Aluminum in Solar Cells With poly-Si/SiOx Passivating Contacts
Influence of AlOx Interlayers on LeTID Kinetics in Ga-Doped Cz-Si
Determination of BO-LID and LeTID related activation energies in Cz-Si and FZ-Si using constant injection conditions
Boron-oxygen related defects in Cz-silicon solar cells degradation, regeneration and beyond
Impact of Hydrogen in Ga‐Doped Silicon on Maximum LeTID Defect Density
Firing and gettering dependence of effective defect density in material exhibiting LeTID
Status of selective emitter technology
Stability test on Cz and Tri-Silicon wafers with different surface morphologies
Regeneration of boron-oxygen related degradation in Cz-Si PERC-type solar cells at high temperatures
Influence of dielectric layers and thermal load on LeTID
Does LeTID occur in c-Si even without a firing step?
Impact of Hydrogen in Ga-Doped Silicon on Maximum LeTID Defect Density
PECVD SixCy as Barrier Layer Against Aluminum in Solar Cells With poly-Si/SiOx Passivating Contacts
Influence of AlOx Interlayers on LeTID Kinetics in Ga-Doped Cz-Si
Determination of BO-LID and LeTID related activation energies in Cz-Si and FZ-Si using constant injection conditions
Boron-oxygen related defects in Cz-silicon solar cells degradation, regeneration and beyond
Impact of Hydrogen in Ga‐Doped Silicon on Maximum LeTID Defect Density
Firing and gettering dependence of effective defect density in material exhibiting LeTID
Status of selective emitter technology
Stability test on Cz and Tri-Silicon wafers with different surface morphologies
Regeneration of boron-oxygen related degradation in Cz-Si PERC-type solar cells at high temperatures
Influence of dielectric layers and thermal load on LeTID
Does LeTID occur in c-Si even without a firing step?
Impact of Hydrogen in Ga-Doped Silicon on Maximum LeTID Defect Density