Strain-engineered inverse charge-funnelling in layered semiconductors

Location
Deutsche Nationalbibliothek Frankfurt am Main
ISSN
2041-1723
Extent
Online-Ressource
Language
Englisch
Notes
online resource.

Bibliographic citation
Strain-engineered inverse charge-funnelling in layered semiconductors ; volume:9 ; number:1 ; day:25 ; month:4 ; year:2018 ; pages:1-7 ; date:12.2018
Nature Communications ; 9, Heft 1 (25.4.2018), 1-7, 12.2018

Classification
Physik

Creator
De Sanctis, Adolfo
Contributor
Amit, Iddo
Hepplestone, Steven P.
Craciun, Monica F.
Russo, Saverio
SpringerLink (Online service)

DOI
10.1038/s41467-018-04099-7
URN
urn:nbn:de:101:1-2018062622160570013930
Rights
Der Zugriff auf das Objekt ist unbeschränkt möglich.
Last update
15.08.2025, 7:39 AM CEST

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Associated

  • De Sanctis, Adolfo
  • Amit, Iddo
  • Hepplestone, Steven P.
  • Craciun, Monica F.
  • Russo, Saverio
  • SpringerLink (Online service)

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