- Location
-
Deutsche Nationalbibliothek Frankfurt am Main
- Extent
-
Online-Ressource
- Language
-
Englisch
- Bibliographic citation
-
In: 10.1021/acs.nanolett.7b05000
- Event
-
Veröffentlichung
- (where)
-
Aachen
- (who)
-
Universitätsbibliothek der RWTH Aachen
- (when)
-
2018
- Creator
-
Yim, Chanyoung
McEvoy, Niall
Riazimehr, Sarah
Schneider, Daniel S.
Gity, Farzan
Monaghan, Scott
Hurley, Paul K.
Lemme, Max Christian
Duesberg, Georg S.
- DOI
-
10.18154/RWTH-CONV-224672
- URN
-
urn:nbn:de:101:1-2019080106103650132650
- Rights
-
Der Zugriff auf das Objekt ist unbeschränkt möglich.
- Last update
-
15.08.2025, 7:29 AM CEST
Data provider
This object is provided by:
Deutsche Nationalbibliothek. If you have any questions about the object, please contact the data provider.
Deutsche Nationalbibliothek. If you have any questions about the object, please contact the data provider.
Associated
- Yim, Chanyoung
- McEvoy, Niall
- Riazimehr, Sarah
- Schneider, Daniel S.
- Gity, Farzan
- Monaghan, Scott
- Hurley, Paul K.
- Lemme, Max Christian
- Duesberg, Georg S.
- Universitätsbibliothek der RWTH Aachen
Time of origin
- 2018
Other Objects (12)
Graphen und 2D-Materialien : Ein neues Center erforscht vielseitig einsetzbare Materialien
Efficient Optoelectronics with 2D Materials
Capacitance–Voltage (C – V ) Characterization of Graphene–Silicon Heterojunction Photodiodes
Capacitance-Voltage (C -V ) Characterization of Graphene-Silicon Heterojunction Photodiodes
Editorial
High Photocurrent in Gated Graphene-Silicon Hybrid Photodiodes
Large Scale MoS2/Si Photodiodes with Graphene Transparent Electrodes
Normally-off transistor topologies in gallium nitride technology
Charakterisierung nanoskaliger Gitter mittels Spektrometrie im Extrem-Ultraviolett
Graphene/silicon heterojunctions for optoelectronic applications
Engineering graphene field effect transistors for analog applications
Herstellung und Charakterisierung von Feldeffekttransistoren mit epitaktischem Graphen
Graphen und 2D-Materialien : Ein neues Center erforscht vielseitig einsetzbare Materialien
Efficient Optoelectronics with 2D Materials
Capacitance–Voltage (C – V ) Characterization of Graphene–Silicon Heterojunction Photodiodes
Capacitance-Voltage (C -V ) Characterization of Graphene-Silicon Heterojunction Photodiodes
Editorial
High Photocurrent in Gated Graphene-Silicon Hybrid Photodiodes
Large Scale MoS2/Si Photodiodes with Graphene Transparent Electrodes
Normally-off transistor topologies in gallium nitride technology
Charakterisierung nanoskaliger Gitter mittels Spektrometrie im Extrem-Ultraviolett
Graphene/silicon heterojunctions for optoelectronic applications
Engineering graphene field effect transistors for analog applications
Herstellung und Charakterisierung von Feldeffekttransistoren mit epitaktischem Graphen
Graphen und 2D-Materialien : Ein neues Center erforscht vielseitig einsetzbare Materialien
Efficient Optoelectronics with 2D Materials
Capacitance–Voltage (C – V ) Characterization of Graphene–Silicon Heterojunction Photodiodes
Capacitance-Voltage (C -V ) Characterization of Graphene-Silicon Heterojunction Photodiodes
Editorial
High Photocurrent in Gated Graphene-Silicon Hybrid Photodiodes
Large Scale MoS2/Si Photodiodes with Graphene Transparent Electrodes
Normally-off transistor topologies in gallium nitride technology
Charakterisierung nanoskaliger Gitter mittels Spektrometrie im Extrem-Ultraviolett
Graphene/silicon heterojunctions for optoelectronic applications
Engineering graphene field effect transistors for analog applications