Experimentelle und numerische Untersuchung von Stickstoffdotierung und Temperaturfeld auf Versetzungen in einkristallinem 100 mm 4H-SiC PVT-Wachstum

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Alternative title: Experimental and numerical investigation of nitrogen doping and temperature field on dislocations in single-crystalline 100 mm 4H-SiC PVT growth

Location: Deutsche Nationalbibliothek Frankfurt am Main

Extent: Online-Ressource

Language: Deutsch

Notes: Erlangen, Friedrich-Alexander-Universität Erlangen-Nürnberg (FAU), Dissertation, 2023

Keyword: Kristallzüchtung
Siliciumcarbid

Event: Veröffentlichung

(where): Erlangen

(who): Friedrich-Alexander-Universität Erlangen-Nürnberg (FAU)

(when): 2023

Creator: Steiner, Johannes

Contributor: Wellmann, Peter

URN: urn:nbn:de:bvb:29-opus4-217247

Rights: Der Zugriff auf das Objekt ist unbeschränkt möglich.

Last update: 14.08.2025, 10:56 AM CEST

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Associated

Steiner, Johannes
Wellmann, Peter
Friedrich-Alexander-Universität Erlangen-Nürnberg (FAU)

Time of origin

2023

Other Objects (12)

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Numerische Simulation und Analyse bipolarer 4H-SiC Leistungsbauelemente

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Dotierung von 4H-SiC durch Ionenimplantation

Aktivierung von Aluminium implantiert in 4H-SiC

Hochschulschrift

Versetzungsverhalten bei der Homoepitaxie von hexagonalem Siliziumkarbid (4H-SiC)

Exhaustive characterization of modified Si vacancies in 4H-SiC

DFT modelling of the edge dislocation in 4H-SiC

Investigation of Implanted Boron in 4H-SiC and Iron in 3C-SiC and Experimental/Theoretical Analysis of the Depletion Zone in 4H-SiC MOS Capacitors

Fabrication of uniform 4H-SiC mesopores by pulsed electrochemical etching

Anharmonic vibrations of the dicarbon antisite defect in 4H-SiC

Kapitel

4h Altenkrempe

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Modeling and simulation of wide bandgap semiconductor devices: 4H/6H-SiC

Hochschulschrift

Modeling and simulation of wide bandgap semiconductor devices : 4H/6H-SiC

Hochschulschrift

Numerische Simulation und Analyse bipolarer 4H-SiC Leistungsbauelemente

Hochschulschrift

Dotierung von 4H-SiC durch Ionenimplantation

Aktivierung von Aluminium implantiert in 4H-SiC

Hochschulschrift

Versetzungsverhalten bei der Homoepitaxie von hexagonalem Siliziumkarbid (4H-SiC)

Exhaustive characterization of modified Si vacancies in 4H-SiC

DFT modelling of the edge dislocation in 4H-SiC

Investigation of Implanted Boron in 4H-SiC and Iron in 3C-SiC and Experimental/Theoretical Analysis of the Depletion Zone in 4H-SiC MOS Capacitors

Fabrication of uniform 4H-SiC mesopores by pulsed electrochemical etching

Anharmonic vibrations of the dicarbon antisite defect in 4H-SiC

Kapitel

4h Altenkrempe

Hochschulschrift

Modeling and simulation of wide bandgap semiconductor devices: 4H/6H-SiC

Hochschulschrift

Modeling and simulation of wide bandgap semiconductor devices : 4H/6H-SiC

Hochschulschrift

Numerische Simulation und Analyse bipolarer 4H-SiC Leistungsbauelemente

Hochschulschrift

Dotierung von 4H-SiC durch Ionenimplantation

Aktivierung von Aluminium implantiert in 4H-SiC

Hochschulschrift

Versetzungsverhalten bei der Homoepitaxie von hexagonalem Siliziumkarbid (4H-SiC)

Exhaustive characterization of modified Si vacancies in 4H-SiC

DFT modelling of the edge dislocation in 4H-SiC

Investigation of Implanted Boron in 4H-SiC and Iron in 3C-SiC and Experimental/Theoretical Analysis of the Depletion Zone in 4H-SiC MOS Capacitors

Fabrication of uniform 4H-SiC mesopores by pulsed electrochemical etching

Anharmonic vibrations of the dicarbon antisite defect in 4H-SiC

Kapitel

4h Altenkrempe

Hochschulschrift

Modeling and simulation of wide bandgap semiconductor devices: 4H/6H-SiC

Hochschulschrift

Modeling and simulation of wide bandgap semiconductor devices : 4H/6H-SiC

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Experimentelle und numerische Untersuchung von Stickstoffdotierung und Temperaturfeld auf Versetzungen in einkristallinem 100 mm 4H-SiC PVT-Wachstum

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Associated

Time of origin

Other Objects (12)

Numerische Simulation und Analyse bipolarer 4H-SiC Leistungsbauelemente

Dotierung von 4H-SiC durch Ionenimplantation

Aktivierung von Aluminium implantiert in 4H-SiC

Versetzungsverhalten bei der Homoepitaxie von hexagonalem Siliziumkarbid (4H-SiC)

Exhaustive characterization of modified Si vacancies in 4H-SiC

DFT modelling of the edge dislocation in 4H-SiC

Investigation of Implanted Boron in 4H-SiC and Iron in 3C-SiC and Experimental/Theoretical Analysis of the Depletion Zone in 4H-SiC MOS Capacitors

Fabrication of uniform 4H-SiC mesopores by pulsed electrochemical etching

Anharmonic vibrations of the dicarbon antisite defect in 4H-SiC

4h Altenkrempe

Modeling and simulation of wide bandgap semiconductor devices: 4H/6H-SiC

Modeling and simulation of wide bandgap semiconductor devices : 4H/6H-SiC

Numerische Simulation und Analyse bipolarer 4H-SiC Leistungsbauelemente

Dotierung von 4H-SiC durch Ionenimplantation

Aktivierung von Aluminium implantiert in 4H-SiC

Versetzungsverhalten bei der Homoepitaxie von hexagonalem Siliziumkarbid (4H-SiC)

Exhaustive characterization of modified Si vacancies in 4H-SiC

DFT modelling of the edge dislocation in 4H-SiC

Investigation of Implanted Boron in 4H-SiC and Iron in 3C-SiC and Experimental/Theoretical Analysis of the Depletion Zone in 4H-SiC MOS Capacitors

Fabrication of uniform 4H-SiC mesopores by pulsed electrochemical etching

Anharmonic vibrations of the dicarbon antisite defect in 4H-SiC

4h Altenkrempe

Modeling and simulation of wide bandgap semiconductor devices: 4H/6H-SiC

Modeling and simulation of wide bandgap semiconductor devices : 4H/6H-SiC

Numerische Simulation und Analyse bipolarer 4H-SiC Leistungsbauelemente

Dotierung von 4H-SiC durch Ionenimplantation

Aktivierung von Aluminium implantiert in 4H-SiC

Versetzungsverhalten bei der Homoepitaxie von hexagonalem Siliziumkarbid (4H-SiC)

Exhaustive characterization of modified Si vacancies in 4H-SiC

DFT modelling of the edge dislocation in 4H-SiC

Investigation of Implanted Boron in 4H-SiC and Iron in 3C-SiC and Experimental/Theoretical Analysis of the Depletion Zone in 4H-SiC MOS Capacitors

Fabrication of uniform 4H-SiC mesopores by pulsed electrochemical etching

Anharmonic vibrations of the dicarbon antisite defect in 4H-SiC

4h Altenkrempe

Modeling and simulation of wide bandgap semiconductor devices: 4H/6H-SiC

Modeling and simulation of wide bandgap semiconductor devices : 4H/6H-SiC

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