Controlling sulfurization of 2D Mo2C crystal for Mo2C/MoS2-based memristor and artificial synapse

Location
Deutsche Nationalbibliothek Frankfurt am Main
ISSN
2397-4621
Extent
Online-Ressource
Language
Englisch
Notes
online resource.

Bibliographic citation
Controlling sulfurization of 2D Mo2C crystal for Mo2C/MoS2-based memristor and artificial synapse ; volume:6 ; number:1 ; day:15 ; month:11 ; year:2022 ; pages:1-8 ; date:12.2022
npj flexible electronics ; 6, Heft 1 (15.11.2022), 1-8, 12.2022

Classification
Elektrotechnik, Elektronik

Creator
Tang, Xin
Yang, Leilei
Huang, Junhua
Chen, Wenjun
Li, Baohua
Yang, Shaodian
Yang, Rongliang
Zeng, Zhiping
Tang, Zikang
Gui, Xuchun
Contributor
SpringerLink (Online service)

DOI
10.1038/s41528-022-00227-y
URN
urn:nbn:de:101:1-2023012809272829616639
Rights
Open Access; Der Zugriff auf das Objekt ist unbeschränkt möglich.
Last update
15.08.2025, 7:28 AM CEST

Data provider

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Associated

  • Tang, Xin
  • Yang, Leilei
  • Huang, Junhua
  • Chen, Wenjun
  • Li, Baohua
  • Yang, Shaodian
  • Yang, Rongliang
  • Zeng, Zhiping
  • Tang, Zikang
  • Gui, Xuchun
  • SpringerLink (Online service)

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