Entering new chemical space with isolable complexes of single, zero-valent silicon and germanium atoms
- Sprache
-
Englisch
- Identifier
-
1248766474
Beteiligte Personen und Organisationen
Yao, Shenglai
Xiong, Yun
Saddington, Artemis
Drieß, Matthias
Xiong, Yun
Saddington, Artemis
Drieß, Matthias
- DOI
-
10.14279/depositonce-14803
- URN
- Rechteinformation
-
Der Zugriff auf das Objekt ist unbeschränkt möglich.
- Letzte Aktualisierung
-
26.01.2023, 13:52 MEZ
Datenpartner
Dieses Objekt wird bereitgestellt von:
Deutsche Nationalbibliothek. Bei Fragen zum Objekt wenden Sie sich bitte an den Datenpartner.
Deutsche Nationalbibliothek. Bei Fragen zum Objekt wenden Sie sich bitte an den Datenpartner.
Beteiligte
- Yao, Shenglai
- Xiong, Yun
- Saddington, Artemis
- Drieß, Matthias
Ähnliche Objekte (12)
Electrical characterization of carbon-hydrogen complexes in silicon and silicon-germanium alloys
Synthesis and Characterization of New Low-Valent Silicon, Germanium and Tin Compounds
Fusing low-valent Germanium with Silicon : from double bonds to polymers and clusters
Multiply functionalized low-valent silicon and germanium compounds: Novel building blocks for extended group 14 systems
Strained silicon and silicon-germanium nanowire tunnel FETs and inverters
Strained silicon and silicon germanium nanowire tunnel FETs and inverters
Strained silicon and silicon-germanium nanowire tunnel FETs and inverters
Strained Silicon-Germanium/Silicon Heterostructure Tunnel FETs for Low Power Applications
Strained Silicon-Germanium/Silicon Heterostructure Tunnel FETs for Low Power Applications
Growth and characterization of silicon and germanium nanowhiskers
Advanced modeling of Silicon-Germanium Heterojunction Bipolar Transistors
Low‐valent Mg(I) complexes by ball‐milling
Electrical characterization of carbon-hydrogen complexes in silicon and silicon-germanium alloys
Synthesis and Characterization of New Low-Valent Silicon, Germanium and Tin Compounds
Fusing low-valent Germanium with Silicon : from double bonds to polymers and clusters
Multiply functionalized low-valent silicon and germanium compounds: Novel building blocks for extended group 14 systems
Strained silicon and silicon-germanium nanowire tunnel FETs and inverters
Strained silicon and silicon germanium nanowire tunnel FETs and inverters
Strained silicon and silicon-germanium nanowire tunnel FETs and inverters
Strained Silicon-Germanium/Silicon Heterostructure Tunnel FETs for Low Power Applications
Strained Silicon-Germanium/Silicon Heterostructure Tunnel FETs for Low Power Applications
Growth and characterization of silicon and germanium nanowhiskers
Advanced modeling of Silicon-Germanium Heterojunction Bipolar Transistors
Low‐valent Mg(I) complexes by ball‐milling
Electrical characterization of carbon-hydrogen complexes in silicon and silicon-germanium alloys
Synthesis and Characterization of New Low-Valent Silicon, Germanium and Tin Compounds
Fusing low-valent Germanium with Silicon : from double bonds to polymers and clusters
Multiply functionalized low-valent silicon and germanium compounds: Novel building blocks for extended group 14 systems
Strained silicon and silicon-germanium nanowire tunnel FETs and inverters
Strained silicon and silicon germanium nanowire tunnel FETs and inverters
Strained silicon and silicon-germanium nanowire tunnel FETs and inverters
Strained Silicon-Germanium/Silicon Heterostructure Tunnel FETs for Low Power Applications
Strained Silicon-Germanium/Silicon Heterostructure Tunnel FETs for Low Power Applications
Growth and characterization of silicon and germanium nanowhiskers
Advanced modeling of Silicon-Germanium Heterojunction Bipolar Transistors