- Location
-
Deutsche Nationalbibliothek Frankfurt am Main
- Extent
-
Online-Ressource
- Language
-
Englisch
- Bibliographic citation
-
Resistance Drift Convergence and Inversion in Amorphous Phase Change Materials ; day:25 ; month:09 ; year:2022 ; extent:9
Advanced functional materials ; (25.09.2022) (gesamt 9)
- Creator
-
Pries, Julian
Stenz, Christian
Schäfer, Lisa
Gutsche, Alexander
Wei, Shuai
Lucas, Pierre
Wuttig, Matthias
- DOI
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10.1002/adfm.202207194
- URN
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urn:nbn:de:101:1-2022092615093796536466
- Rights
-
Open Access; Der Zugriff auf das Objekt ist unbeschränkt möglich.
- Last update
- 15.08.2025, 7:29 AM CEST
Data provider
This object is provided by:
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Deutsche Nationalbibliothek. If you have any questions about the object, please contact the data provider.
Associated
- Pries, Julian
- Stenz, Christian
- Schäfer, Lisa
- Gutsche, Alexander
- Wei, Shuai
- Lucas, Pierre
- Wuttig, Matthias
Other Objects (12)
Resistance Drift Convergence and Inversion in Amorphous Phase Change Materials
Underlying mechanisms of resistance drift in amorphous phase-change materials
Relation between bandgap and resistance drift in amorphous phase change materials
Dielectric properties of amorphous phase-change materials
Chalcogenides by Design: Functionality through Metavalent Bonding and Confinement
Electrical transport in micro- and nanoscale devices of amorphous phase-change materials
Interplay of glass dynamics and crystallization kinetics in amorphous phase change materials
Atom Probe Tomography Advances Chalcogenide Phase‐Change and Thermoelectric Materials
Metavalent Bonding in Solids: Characteristic Representatives, Their Properties, and Design Options
Metavalent bonding impacts charge carrier transport across grain boundaries
Chalcogenides by Design: Functionality through Metavalent Bonding and Confinement
Thermoelectric Performance of IV–VI Compounds with Octahedral‐Like Coordination: A Chemical‐Bonding Perspective
Resistance Drift Convergence and Inversion in Amorphous Phase Change Materials
Underlying mechanisms of resistance drift in amorphous phase-change materials
Relation between bandgap and resistance drift in amorphous phase change materials
Dielectric properties of amorphous phase-change materials
Chalcogenides by Design: Functionality through Metavalent Bonding and Confinement
Electrical transport in micro- and nanoscale devices of amorphous phase-change materials
Interplay of glass dynamics and crystallization kinetics in amorphous phase change materials
Atom Probe Tomography Advances Chalcogenide Phase‐Change and Thermoelectric Materials
Metavalent Bonding in Solids: Characteristic Representatives, Their Properties, and Design Options
Metavalent bonding impacts charge carrier transport across grain boundaries
Chalcogenides by Design: Functionality through Metavalent Bonding and Confinement
Thermoelectric Performance of IV–VI Compounds with Octahedral‐Like Coordination: A Chemical‐Bonding Perspective
Resistance Drift Convergence and Inversion in Amorphous Phase Change Materials
Underlying mechanisms of resistance drift in amorphous phase-change materials
Relation between bandgap and resistance drift in amorphous phase change materials
Dielectric properties of amorphous phase-change materials
Chalcogenides by Design: Functionality through Metavalent Bonding and Confinement
Electrical transport in micro- and nanoscale devices of amorphous phase-change materials
Interplay of glass dynamics and crystallization kinetics in amorphous phase change materials
Atom Probe Tomography Advances Chalcogenide Phase‐Change and Thermoelectric Materials
Metavalent Bonding in Solids: Characteristic Representatives, Their Properties, and Design Options
Metavalent bonding impacts charge carrier transport across grain boundaries
Chalcogenides by Design: Functionality through Metavalent Bonding and Confinement