Stochastic dynamics of resistive switching: fluctuations lead to optimal particle number
- Location
-
Deutsche Nationalbibliothek Frankfurt am Main
- Extent
-
Online-Ressource
- Language
-
Englisch
- Bibliographic citation
-
In: New journal of physics : the open-access journal for physics, Band 19, Ausgabe 9, 2017
- Event
-
Veröffentlichung
- (where)
-
Berlin
- (who)
-
Humboldt-Universität zu Berlin
- (when)
-
2022
- Creator
-
Radtke, Paul Kaspar
Hazel, Andrew
Straube, Arthur
Schimansky-Geier, Lutz
- DOI
-
10.1088/1367-2630/aa818b
- URN
-
urn:nbn:de:kobv:11-110-18452/25044-4
- Rights
-
Der Zugriff auf das Objekt ist unbeschränkt möglich.
- Last update
-
15.08.2025, 7:30 AM CEST
Data provider
This object is provided by:
Deutsche Nationalbibliothek. If you have any questions about the object, please contact the data provider.
Deutsche Nationalbibliothek. If you have any questions about the object, please contact the data provider.
Associated
- Radtke, Paul Kaspar
- Hazel, Andrew
- Straube, Arthur
- Schimansky-Geier, Lutz
- Humboldt-Universität zu Berlin
Time of origin
- 2022
Other Objects (12)
Filament Dynamics in Resistive Switching
Lead‐Free Perovskites and Metal Halides for Resistive Switching Memory and Artificial Synapse
Germanium sulphide based resistive switching devices
Resistive Switching Systems: A Spectromicroscopy Approach
Resistive switching in diamondoid thin films
Resistive switching in Cu:TCNQ thin films
Resistive switching in TiO2 thin films
Interaction between redox-based resistive switching mechanisms
Resistive switching in Cu: TCNQ thin films
Modeling and simulation of resistive switching devices
Resistive switching in electrochemical metallization memory cells
Resistive switching in Pt/TiO2/Pt
Filament Dynamics in Resistive Switching
Lead‐Free Perovskites and Metal Halides for Resistive Switching Memory and Artificial Synapse
Germanium sulphide based resistive switching devices
Resistive Switching Systems: A Spectromicroscopy Approach
Resistive switching in diamondoid thin films
Resistive switching in Cu:TCNQ thin films
Resistive switching in TiO2 thin films
Interaction between redox-based resistive switching mechanisms
Resistive switching in Cu: TCNQ thin films
Modeling and simulation of resistive switching devices
Resistive switching in electrochemical metallization memory cells
Resistive switching in Pt/TiO2/Pt
Filament Dynamics in Resistive Switching
Lead‐Free Perovskites and Metal Halides for Resistive Switching Memory and Artificial Synapse
Germanium sulphide based resistive switching devices
Resistive Switching Systems: A Spectromicroscopy Approach
Resistive switching in diamondoid thin films
Resistive switching in Cu:TCNQ thin films
Resistive switching in TiO2 thin films
Interaction between redox-based resistive switching mechanisms
Resistive switching in Cu: TCNQ thin films
Modeling and simulation of resistive switching devices
Resistive switching in electrochemical metallization memory cells