Artificial optoelectronic synapse based on CdSe nanobelt photosensitized MoS 2 transistor with long retention time for neuromorphic application
- Standort
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Deutsche Nationalbibliothek Frankfurt am Main
- Umfang
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Online-Ressource
- Sprache
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Englisch
- Erschienen in
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Artificial optoelectronic synapse based on CdSe nanobelt photosensitized MoS 2 transistor with long retention time for neuromorphic application ; volume:13 ; number:22 ; year:2024 ; pages:4211-4224 ; extent:14
Nanophotonics ; 13, Heft 22 (2024), 4211-4224 (gesamt 14)
- Urheber
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Song, Xiaohui
Lv, Xiaojing
He, Mengjie
Mao, Fei
Bai, Jie
Qin, Xuan
Hu, Yanjie
Ma, Zinan
Liu, Zhen
Li, Xueping
Shen, Chenhai
Jiang, Yurong
Zhao, Xu
Xia, Congxin
- DOI
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10.1515/nanoph-2024-0368
- URN
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urn:nbn:de:101:1-2409271750345.287802414671
- Rechteinformation
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Open Access; Der Zugriff auf das Objekt ist unbeschränkt möglich.
- Letzte Aktualisierung
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15.08.2025, 07:31 MESZ
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Beteiligte
- Song, Xiaohui
- Lv, Xiaojing
- He, Mengjie
- Mao, Fei
- Bai, Jie
- Qin, Xuan
- Hu, Yanjie
- Ma, Zinan
- Liu, Zhen
- Li, Xueping
- Shen, Chenhai
- Jiang, Yurong
- Zhao, Xu
- Xia, Congxin
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