Impact of Oxygen Reservoir Layer on 3T Oxygen Ion‐based Electrochemical Random Access Memory Performance
Abstract: This study investigates the impact of an oxygen reservoir layer on the performance of three‐terminal (3T) oxide ion‐based electrochemical random access memory (Ox‐ECRAM). Three Ox‐ECRAM synapse devices are compared: single layer, double 1, and double 2. The results indicate that the oxygen reservoir layer is crucial for maintaining channel conductance while preventing gate leakage. The oxygen reservoir layer also modulates conductance via the absorption and supply of oxygen ions. In addition, the ion migration barrier energy of the oxygen reservoir layer plays a key role in the reliability of the Ox‐ECRAM, with higher values leading to more stable retention and endurance. The results of this study highlight the importance of the oxygen reservoir layer in Ox‐ECRAM performance.
- Location
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Deutsche Nationalbibliothek Frankfurt am Main
- Extent
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Online-Ressource
- Language
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Englisch
- Bibliographic citation
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Impact of Oxygen Reservoir Layer on 3T Oxygen Ion‐based Electrochemical Random Access Memory Performance ; day:11 ; month:06 ; year:2023 ; extent:8
Advanced electronic materials ; (11.06.2023) (gesamt 8)
- Creator
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Kim, Hyejin
Han, Geonhui
Seo, Jongseon
Lee, Daeseok
- DOI
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10.1002/aelm.202300133
- URN
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urn:nbn:de:101:1-2023061415074230960229
- Rights
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Open Access; Der Zugriff auf das Objekt ist unbeschränkt möglich.
- Last update
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14.08.2025, 10:56 AM CEST
Data provider
Deutsche Nationalbibliothek. If you have any questions about the object, please contact the data provider.
Associated
- Kim, Hyejin
- Han, Geonhui
- Seo, Jongseon
- Lee, Daeseok
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