The role of Si interstitials in the migration and growth of Ge nanocrystallites under thermal annealing in an oxidizing ambient
- Standort
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Deutsche Nationalbibliothek Frankfurt am Main
- ISSN
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1556-276X
- Umfang
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Online-Ressource
- Sprache
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Englisch
- Anmerkungen
-
online resource.
- Erschienen in
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The role of Si interstitials in the migration and growth of Ge nanocrystallites under thermal annealing in an oxidizing ambient ; volume:9 ; number:1 ; day:7 ; month:7 ; year:2014 ; pages:1-5 ; date:12.2014
Nanoscale research letters ; 9, Heft 1 (7.7.2014), 1-5, 12.2014
- Urheber
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Chen, Kuan-Hung
Wang, Ching-Chi
George, Tom
Li, Pei-Wen
- Beteiligte Personen und Organisationen
-
SpringerLink (Online service)
- DOI
-
10.1186/1556-276X-9-339
- URN
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urn:nbn:de:101:1-2021083121282170416426
- Rechteinformation
-
Open Access; Der Zugriff auf das Objekt ist unbeschränkt möglich.
- Letzte Aktualisierung
-
15.08.2025, 07:36 MESZ
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Beteiligte
- Chen, Kuan-Hung
- Wang, Ching-Chi
- George, Tom
- Li, Pei-Wen
- SpringerLink (Online service)
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