Hochschulschrift
Integration of resistive switching devices in crossbar structures
- Standort
-
Deutsche Nationalbibliothek Frankfurt am Main
- ISBN
-
9783893366361
- Maße
-
21 cm
- Umfang
-
XII, 142 S.
- Sprache
-
Englisch
- Anmerkungen
-
Ill., graph. Darst.
Zugl.: Aachen, Techn. Hochsch., Diss., 2009
- Erschienen in
-
Schriften des Forschungszentrums Jülich / Reihe Information / Forschungszentrum Jülich ; Bd. 10, [...]
- Klassifikation
-
Elektrotechnik, Elektronik
- Schlagwort
-
Nichtflüchtiger Speicher ; Titandioxid
- Ereignis
-
Veröffentlichung
- (wo)
-
Jülich
- (wer)
-
Forschungszentrum, Zentralbibliothek
- (wann)
-
2010
- Urheber
-
Nauenheim, Christian
- Inhaltsverzeichnis
- Rechteinformation
-
Bei diesem Objekt liegt nur das Inhaltsverzeichnis digital vor. Der Zugriff darauf ist unbeschränkt möglich.
- Letzte Aktualisierung
-
11.06.2025, 13:46 MESZ
Datenpartner
Dieses Objekt wird bereitgestellt von:
Deutsche Nationalbibliothek. Bei Fragen zum Objekt wenden Sie sich bitte an den Datenpartner.
Deutsche Nationalbibliothek. Bei Fragen zum Objekt wenden Sie sich bitte an den Datenpartner.
Objekttyp
- Hochschulschrift
Beteiligte
- Nauenheim, Christian
- Forschungszentrum, Zentralbibliothek
Entstanden
- 2010
Ähnliche Objekte (12)
Integration of resistive switching devices in crossbar structures
Integration of redox-based resistive switching memory devices
Integration of redox based resistive switching memory devices
Germanium sulphide based resistive switching devices
Modeling and simulation of resistive switching devices
Nanoscale resistive switching memory devices: a review
Non-standard switching phenomena and interface effects in resistive switching devices
The ultimate switching speed limit of redox-based resistive switching devices
Memristive tonotopic mapping with volatile resistive switching memory devices
Area-dependent resistive switching in PCMO-based memristive devices
Resistive Switching Devices Based on Solution Processable Metal Oxides
Memristive devices based on mass printed organic resistive switching layers
Integration of resistive switching devices in crossbar structures
Integration of redox-based resistive switching memory devices
Integration of redox based resistive switching memory devices
Germanium sulphide based resistive switching devices
Modeling and simulation of resistive switching devices
Nanoscale resistive switching memory devices: a review
Non-standard switching phenomena and interface effects in resistive switching devices
The ultimate switching speed limit of redox-based resistive switching devices
Memristive tonotopic mapping with volatile resistive switching memory devices
Area-dependent resistive switching in PCMO-based memristive devices
Resistive Switching Devices Based on Solution Processable Metal Oxides
Memristive devices based on mass printed organic resistive switching layers
Integration of resistive switching devices in crossbar structures
Integration of redox-based resistive switching memory devices
Integration of redox based resistive switching memory devices
Germanium sulphide based resistive switching devices
Modeling and simulation of resistive switching devices
Nanoscale resistive switching memory devices: a review
Non-standard switching phenomena and interface effects in resistive switching devices
The ultimate switching speed limit of redox-based resistive switching devices
Memristive tonotopic mapping with volatile resistive switching memory devices
Area-dependent resistive switching in PCMO-based memristive devices
Resistive Switching Devices Based on Solution Processable Metal Oxides