Hochschulschrift
Integration of resistive switching devices in crossbar structures
- Location
-
Deutsche Nationalbibliothek Frankfurt am Main
- ISBN
-
9783893366361
- Dimensions
-
21 cm
- Extent
-
XII, 142 S.
- Language
-
Englisch
- Notes
-
Ill., graph. Darst.
Zugl.: Aachen, Techn. Hochsch., Diss., 2009
- Bibliographic citation
-
Schriften des Forschungszentrums Jülich / Reihe Information / Forschungszentrum Jülich ; Bd. 10, [...]
- Classification
-
Elektrotechnik, Elektronik
- Keyword
-
Nichtflüchtiger Speicher ; Titandioxid
- Event
-
Veröffentlichung
- (where)
-
Jülich
- (who)
-
Forschungszentrum, Zentralbibliothek
- (when)
-
2010
- Creator
-
Nauenheim, Christian
- Table of contents
- Rights
-
Bei diesem Objekt liegt nur das Inhaltsverzeichnis digital vor. Der Zugriff darauf ist unbeschränkt möglich.
- Last update
-
11.06.2025, 1:46 PM CEST
Data provider
This object is provided by:
Deutsche Nationalbibliothek. If you have any questions about the object, please contact the data provider.
Deutsche Nationalbibliothek. If you have any questions about the object, please contact the data provider.
Object type
- Hochschulschrift
Associated
- Nauenheim, Christian
- Forschungszentrum, Zentralbibliothek
Time of origin
- 2010
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Non-standard switching phenomena and interface effects in resistive switching devices
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Standards for the Characterization of Endurance in Resistive Switching Devices
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Integration of redox based resistive switching memory devices
Integration of redox-based resistive switching memory devices
Germanium sulphide based resistive switching devices
Modeling and simulation of resistive switching devices
Nanoscale resistive switching memory devices: a review
Non-standard switching phenomena and interface effects in resistive switching devices
The ultimate switching speed limit of redox-based resistive switching devices
Area-dependent resistive switching in PCMO-based memristive devices
Standards for the Characterization of Endurance in Resistive Switching Devices
Trade‐Off Between Data Retention and Switching Speed in Resistive Switching ReRAM Devices
Review on resistive switching devices based on multiferroic BiFeO3
Integration of resistive switching devices in crossbar structures
Integration of redox based resistive switching memory devices
Integration of redox-based resistive switching memory devices
Germanium sulphide based resistive switching devices
Modeling and simulation of resistive switching devices
Nanoscale resistive switching memory devices: a review
Non-standard switching phenomena and interface effects in resistive switching devices
The ultimate switching speed limit of redox-based resistive switching devices
Area-dependent resistive switching in PCMO-based memristive devices
Standards for the Characterization of Endurance in Resistive Switching Devices
Trade‐Off Between Data Retention and Switching Speed in Resistive Switching ReRAM Devices