- Standort
-
Deutsche Nationalbibliothek Frankfurt am Main
- Umfang
-
Online-Ressource
- Erschienen in
-
On the structure of grain/interphase boundaries and interfaces ; volume:5 ; pages:1603-1615
Beilstein journal of nanotechnology ; 5, 1603-1615
- Klassifikation
-
Ingenieurwissenschaften und Maschinenbau
- DOI
-
10.3762/bjnano.5.172
- URN
-
urn:nbn:de:101:1-2015012826699
- Rechteinformation
-
Der Zugriff auf das Objekt ist unbeschränkt möglich.
- Letzte Aktualisierung
-
15.08.2025, 07:24 MESZ
Datenpartner
Dieses Objekt wird bereitgestellt von:
Deutsche Nationalbibliothek. Bei Fragen zum Objekt wenden Sie sich bitte an den Datenpartner.
Deutsche Nationalbibliothek. Bei Fragen zum Objekt wenden Sie sich bitte an den Datenpartner.
Ähnliche Objekte (12)
Atomic Structure of Domain and Interphase Boundaries in Ferroelectric HfO₂
Non-Amontons frictional behaviors of grain boundaries at layered material interfaces
Structure, chemistry and nanomechanics of grain boundaries in Cu-Ag alloys
Impact of Mismatch Angle on Electronic Transport Across Grain Boundaries and Interfaces in 2D Materials
Heat Transport at Silicon Grain Boundaries
Frankreich.- Paris.- Internationaler Kongress "Intergranular and Interphase Boundaries in Materials"
Segregation of interstitial impurities at grain boundaries in transition metals : electronic structure calculations
Variational models for dislocations at grain boundaries
Special Grain Boundaries in Ultrafine-Grained Tungsten
Reversible defect engineering in graphene grain boundaries
Migration of solidification grain boundaries and prediction
Polycrystalline semiconductors, [1].. Grain boundaries and interfaces : Malente, Fed. Rep. of Germany, August 29 - September 2, 1988
Atomic Structure of Domain and Interphase Boundaries in Ferroelectric HfO₂
Non-Amontons frictional behaviors of grain boundaries at layered material interfaces
Structure, chemistry and nanomechanics of grain boundaries in Cu-Ag alloys
Impact of Mismatch Angle on Electronic Transport Across Grain Boundaries and Interfaces in 2D Materials
Heat Transport at Silicon Grain Boundaries
Frankreich.- Paris.- Internationaler Kongress "Intergranular and Interphase Boundaries in Materials"
Segregation of interstitial impurities at grain boundaries in transition metals : electronic structure calculations
Variational models for dislocations at grain boundaries
Special Grain Boundaries in Ultrafine-Grained Tungsten
Reversible defect engineering in graphene grain boundaries
Migration of solidification grain boundaries and prediction
Polycrystalline semiconductors, [1].. Grain boundaries and interfaces : Malente, Fed. Rep. of Germany, August 29 - September 2, 1988
Atomic Structure of Domain and Interphase Boundaries in Ferroelectric HfO₂
Non-Amontons frictional behaviors of grain boundaries at layered material interfaces
Structure, chemistry and nanomechanics of grain boundaries in Cu-Ag alloys
Impact of Mismatch Angle on Electronic Transport Across Grain Boundaries and Interfaces in 2D Materials
Heat Transport at Silicon Grain Boundaries
Frankreich.- Paris.- Internationaler Kongress "Intergranular and Interphase Boundaries in Materials"
Segregation of interstitial impurities at grain boundaries in transition metals : electronic structure calculations
Variational models for dislocations at grain boundaries
Special Grain Boundaries in Ultrafine-Grained Tungsten
Reversible defect engineering in graphene grain boundaries
Migration of solidification grain boundaries and prediction